Toshiba - MOSFETs
3.840 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 79 A | 7.7 mOhms | 20 V | 1.5 V | 44 nC | - 55 C | + 175 C | 93 W | Enhancement | U-MOSIX-H | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 75 A | 8.2 mOhms | 20 V | 1.5 V | 28 nC | - 55 C | + 175 C | 81 W | Enhancement | U-MOSIX-H | Tube | ||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 45 V | 232 A | 1.4 mOhms | 20 V | 1.4 V | 74 nC | + 175 C | 132 W | Enhancement | U-MOSIX-H | Reel | |||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 30 V | 124 A | 2.9 mOhms | 20 V | 1.1 V | 26 nC | - 55 C | + 175 C | 81 W | Enhancement | U-MOSIX-H | Reel | ||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 60 V | 135 A | 3.5 mOhms | 20 V | 1.5 V | 55 nC | + 175 C | 116 W | Enhancement | U-MOSIX-H | Reel | |||||
Not Available Online | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 60 V | 105 A | 4.8 mOhms | 20 V | 1.5 V | 29 nC | - 55 C | + 175 C | 104 W | Enhancement | U-MOSIX-H | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 30 A | 65 mOhms | 30 V | 4 V | 62 nC | - 55 C | + 150 C | 270 W | Enhancement | DTMOSVI | Reel | ||||
Mfr: SSM6N61NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET 2 in 1 Nch ID: 4A | 0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel | 2 Channel | 20 V | 4 A | 108 mOhms | 8 V | 400 mV | 3.6 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | U-MOSVII-H | Reel | ||
Mfr: SSM3J15FV,L3F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET High Speed Switching | 0In Stock | Si | SMD/SMT | VESM-3 | P-Channel | 1 Channel | 30 V | 100 mA | 12 Ohms | 20 V | 1.1 V | + 150 C | 150 mW | Enhancement | AEC-Q101 | MOSVI | Reel | ||||
Mfr: SSM3K16FU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET High Speed Switching | 0In Stock | Si | SMD/SMT | SOT-323 | N-Channel | 1 Channel | 20 V | 100 mA | 3 Ohms | 10 V | 600 mV | + 150 C | 150 mW | Enhancement | AEC-Q101 | MOSVI | Reel | ||||
Mfr: SSM3K347R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=2A VDSS=38V | 0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 38 V | 2 A | 280 mOhms | 20 V | 1.4 V | 2.5 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSIV | Reel | ||
Mfr: SSM3K44FS,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=.1A VDSS=30V | 0In Stock | Si | SMD/SMT | SOT-416-3 | N-Channel | 1 Channel | 30 V | 100 mA | 2.2 Ohms | 20 V | 800 mV | - 55 C | + 150 C | 150 mW | Enhancement | AEC-Q101 | MOSVI | Reel | |||
Mfr: SSM6K341NU,LF TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs LowON Res MOSFET ID=6A VDSS=100V | Not Available Online | Si | SMD/SMT | UDFN-6 | N-Channel | 1 Channel | 60 V | 6 A | 28 mOhms | 20 V | 1.5 V | 9.3 nC | - 55 C | + 150 C | 1.25 W | Enhancement | U-MOSVIII-H | Reel | |||
Mfr: SSM3J118TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=-1.4A VDSS=-30V | 0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 30 V | 1.4 A | 240 mOhms | 20 V | 2.6 V | + 150 C | 800 mW | Enhancement | AEC-Q101 | Reel | |||||
Mfr: SSM6N357R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=.65A VDSS=60V | 0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 2 Channel | 60 V | 650 mA | 1.8 Ohms | 12 V | 1.3 V | 1.5 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | MOSV | Reel | ||
Mfr: TK33S10N1Z,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOSVIII 100V 10m max(VGS=10V) DPAK | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 33 A | 9.7 mOhms | 20 V | 2 V | 28 nC | - 55 C | + 175 C | 125 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | ||
Mfr: TPN2010FNH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOSVIII 250V 200m (VGS=10V) TSON-ADV | 0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 250 V | 9.9 A | 168 mOhms | 20 V | 4 V | 7 nC | - 55 C | + 150 C | 39 W | Enhancement | U-MOSVIII-H | Reel | |||
0In Stock | Si | SMD/SMT | ES6-6 | N-Channel | 2 Channel | 20 V | 180 mA | 20 Ohms, 20 Ohms | 10 V | 400 mV | - 55 C | + 150 C | 150 mW | Enhancement | MOSVI | Reel | |||||
0In Stock | Si | SMD/SMT | UF-6 | P-Channel | 1 Channel | 30 V | 2.5 A | 73 mOhms | 20 V | 2.6 V | 16 nC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | |||
Mfr: TK110A10PL,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=36W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 36 A | 16 mOhms | 20 V | 2.5 V | 33 nC | - 55 C | + 175 C | 36 W | Enhancement | U-MOSIX-H | Tube | |||
Mfr: TK110E10PL,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220 PD=87W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 42 A | 16 mOhms | 20 V | 2.5 V | 33 nC | - 55 C | + 175 C | 87 W | Enhancement | U-MOSIX-H | Tube | |||
Mfr: TK16J60W,S1VE TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-3PN PD=130W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 600 V | 15.8 A | 190 mOhms | 30 V | 3.7 V | 38 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | Tray | |||
Mfr: TK1K7A60F,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=35W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 4 A | 1.7 Ohms | 30 V | 4 V | 16 nC | - 55 C | + 150 C | 35 W | Enhancement | MOSIX | Tube | |||
Mfr: TK20E60W5,S1VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220 PD=165W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 20 A | 175 mOhms | 30 V | 4.5 V | 55 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tube | |||
Mfr: TK28N65W5,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-247(OS) PD=230W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 27.6 A | 130 mOhms | 30 V | 4.5 V | 90 nC | - 55 C | + 150 C | 230 W | Enhancement | DTMOSIV | Tube |