Toshiba - MOSFETs
3.840 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: XPH4R714MC,L1XHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 132W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | SOP-Advance-8 | P-Channel | 1 Channel | 40 V | 60 A | 4.7 mOhms | - 20 V, 10 V | 2.1 V | 160 nC | - 55 C | + 175 C | 132 W | Enhancement | AEC-Q101 | Reel | XPH4R714MC,L1XHQ(O | |||
Mfr: XPN9R614MC,L1XHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 100W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | TSON-Advance-8 | P-Channel | 1 Channel | 40 V | 40 A | 9.6 mOhms | - 20 V, 10 V | 2.1 V | 64 nC | - 55 C | + 175 C | 100 W | Enhancement | AEC-Q101 | Reel | XPN9R614MC,L1XHQ(O | |||
Mfr: SSM6J422TU,LXHF TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs SMOS P-ch VDSS=-20V, VGSS=+6/-8V, ID=-4. | Not Available Online | Si | SMD/SMT | UF6-6 | P-Channel | 1 Channel | 20 V | 4 A | 42.7 mOhms | - 8 V, 6 V | 1 V | 12.8 nC | + 150 C | 1 W | Enhancement | AEC-Q101 | Reel | |||||
Mfr: TK2R4E08QM,S1X TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs UMOS10 TO-220AB 80V 2.4mohm | Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 120 A | 2.44 mOhms | 20 V | 3.5 V | 178 nC | + 175 C | 300 W | Enhancement | Tube | TK2R4E08QM,S1X(S | |||||
0In Stock | Si | SMD/SMT | DPAK-2 (TO-252-2) | N-Channel | 1 Channel | 80 V | 84 A | 5.1 mOhms | 20 V | 3.5 V | 56 nC | + 175 C | 104 W | Enhancement | Reel | TK5R1P08QM,RQ(S2 | ||||||
Mfr: TK5R3E08QM,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOS10 TO-220AB 80V 5.3mohm | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 120 A | 5.3 mOhms | 20 V | 3.5 V | 55 nC | + 175 C | 150 W | Enhancement | Tube | TK5R3E08QM,S1X(S | |||||
Mfr: TK5R1A08QM,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOS10 TO-220SIS 80V 5.1mohm | 0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 80 V | 70 A | 5.1 mOhms | 20 V | 3.5 V | 54 nC | + 175 C | 45 W | Enhancement | Tube | TK5R1A08QM,S4X(S | |||||
Mfr: SSM6K809R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs AUTO AEC-Q SS MOS N-ch Logic-Level Gate Drive VDSS:60V IC:6.0A PD:1.5W TSOP6F | 0In Stock | Si | SMD/SMT | TSOP6F | N-Channel | 1 Channel | 60 V | 6 A | 36 mOhms | 20 V | 2.5 V | 9.3 nC | + 175 C | 1.5 W | Enhancement | AEC-Q101 | Reel | SSM6K809R,LXHF(B | ||||
Mfr: SSM6K804R,LF TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs Silicon N-channel MOS (U-MOSIX-H) | Not Available Online | Si | Reel | |||||||||||||||||||
0In Stock | Si | 650 V | 24 A | 92 mOhms | 30 V | 4 V | 40 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | ||||||||||
0In Stock | Si | 650 V | 18 A | 130 mOhms | 30 V | 4 V | 29 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | ||||||||||
0In Stock | Si | SMD/SMT | DFN2020B-6 | N-Channel | 1 Channel | 30 V | 10 A | 56 mOhms | - 8 V, 12 V | 1 V | 2.2 nC | + 150 C | 3.3 W | Enhancement | Reel | |||||||
Mfr: SSM6P35FE,LM TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET P-Channel | 0In Stock | Si | SMD/SMT | ES6-6 | MOSVI | Reel | ||||||||||||||||
Mfr: TPW1R306PL,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs POWER MOSFET TRANSISTOR PD=170W | 0In Stock | Si | SMD/SMT | DSOP-8 | N-Channel | 1 Channel | 60 V | 260 A | 1.29 mOhms | 20 V | 1.5 V | 91 nC | - 55 C | + 175 C | 170 W | Enhancement | U-MOSIX-H | Reel | ||||
Mfr: SSM6J214FE(TE85L,F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=-3.6A VDSS=-30V | 0In Stock | Si | SMD/SMT | SOT-563-6 | P-Channel | 1 Channel | 30 V | 3.6 A | 50 mOhms | 12 V | 1.2 V | 7.9 nC | - 55 C | + 150 C | 700 mW | Enhancement | U-MOSVI | Reel | ||||
Mfr: TK12A80W,S4X TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs N-Ch 800V 1400pF 23nC 11.5A 45W | Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 11.5 A | 380 mOhms | 20 V | 3 V | 23 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK17E80W,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 800V 2050pF 32nC 17A 180W | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 17 A | 250 mOhms | 20 V | 3 V | 32 nC | - 55 C | + 150 C | 180 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TJ90S04M3L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 180W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 90 A | 4.3 mOhms | - 20 V, 10 V | 2 V | 172 nC | + 175 C | 180 W | Enhancement | AEC-Q101 | Reel | TJ90S04M3L,LXHQ(O | ||||
Mfr: XK1R9F10QB,LXGQ TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs 375W 1MHz Automotive; AEC-Q101 | Not Available Online | Si | SMD/SMT | TO-220SM-3 | N-Channel | 1 Channel | 100 V | 160 A | 1.92 mOhms | 20 V | 3.5 V | 184 nC | + 175 C | 375 W | Enhancement | AEC-Q101 | Reel | XK1R9F10QB,LXGQ(O | ||||
Mfr: XPH4R10ANB,L1XHQ TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs PD=170W F=1MHZ AEC-Q101 | Not Available Online | Si | SMD/SMT | SOP-Advance-8 | N-Channel | 1 Channel | 100 V | 70 A | 4.1 mOhms | 20 V | 3.5 V | 75 nC | - 55 C | + 175 C | 170 W | Enhancement | AEC-Q101 | Reel | ||||
0In Stock | Si | SMD/SMT | 2-10AG1A | N-Channel | 1 Channel | 100 V | 300 A | 1.03 mOhms | 20 V | 3.5 V | 269 nC | - 55 C | + 175 C | 750 W | Enhancement | Reel | ||||||
Mfr: TK099E60Z1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 600 V 0.099 Ohm N-ch MOSFET TO-220 DTMOS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 25 A | 99 mOhms | 30 V | 4 V | 36 nC | + 150 C | 176 W | Enhancement | Tube | ||||||
Mfr: SSM3K389R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-ch MOSFET, 60 V, 2 A, 82 m at 10 V, TSOP6F | 0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 60 V | 2 A | 171 mOhms | 20 V | 2.1 V | 1.84 nC | + 150 C | 1.7 W | Enhancement | Reel | ||||||
Mfr: XPH3R908QB,L1XHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs POWER MOSFET TRANSISTOR SOP Advance(WF) PD=132W F=1MHZ | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 80 V | 80 A | 5.7 mOhms | 20 V | 3.5 V | 63 nC | + 175 C | 132 W | Enhancement | AEC-Q101 | Reel | |||||
Mfr: XPMR5904PB,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 40V 0.59mOhm N-ch MOSFET AEC-Q SOP Advance(EWF) | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 40 V | 478 A | 0.59 mOhms | 20 V | 3 V | 61 nC | + 175 C | 272 W | Enhancement | AEC-Q101 | Reel |