Toshiba - MOSFETs
3.364 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: XPN6R706NC,L1XHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 100W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | TSON-Advance-8 | N-Channel | 1 Channel | 60 V | 40 A | 6.7 mOhms | - 20 V, 20 V | 2.5 V | 35 nC | + 175 C | 100 W | Enhancement | AEC-Q101 | Reel | XPN6R706NC,L1XHQ(O | ||||
Mfr: SSM3K37FS,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small Low ON Resistane MOSFETs | 0In Stock | Si | SMD/SMT | SOT-416-3 | N-Channel | 1 Channel | 20 V | 200 mA | 2.2 Ohms | - 10 V, 10 V | 350 mV | - 55 C | + 150 C | 100 mW | Enhancement | U-MOSIII | Reel | |||||
Mfr: SSM3J332R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SM Sig P-CH MOS 12V VGSS -6A -30VDSS | 0In Stock | Si | P-Channel | 1 Channel | U-MOSVI | Reel | ||||||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 150 V | 120 A | 4.9 mOhms | - 20 V, 20 V | 4.5 V | 96 nC | - 55 C | + 175 C | 300 W | Enhancement | Tube | ||||||
Mfr: TK3R1A04PL,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 40V 4670pF 63.4nC 82A 36W | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 40 V | 82 A | 2.5 mOhms | - 20 V, 20 V | 1.4 V | 63.4 nC | - 55 C | + 175 C | 36 W | Enhancement | U-MOSIX-H | Tube | ||||
Mfr: SSM3H137TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=2A VDSS=34V | 0In Stock | Si | SMD/SMT | UFM-3 | N-Channel | 1 Channel | 34 V | 2 A | 240 mOhms | - 20 V, 20 V | 700 mV | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSIV | Reel | |||||
0In Stock | Si | SMD/SMT | TSOP-6F | N-Channel | 100 V | 2 A | 125 mOhms | 20 V | 2.5 V | 3.6 nC | + 150 C | 2 W | Enhancement | Reel | ||||||||
Mfr: SSM3K15ACT(TPL3) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SM Sig N-CH MOS 30V 0.1A 20V VGSS | 0In Stock | Si | SMD/SMT | CST3-3 | N-Channel | 1 Channel | 30 V | 100 mA | 3.6 Ohms | - 20 V, 20 V | 100 mW | Reel | ||||||||||
Mfr: SSM6L40TU(TE85L,F) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch FET 30V 1.6A 1V 500mW | 0In Stock | Si | SMD/SMT | UF-6 | N-Channel, P-Channel | 2 Channel | 30 V | 1.4 A, 1.6 A | 122 mOhms | 500 mW | Reel | |||||||||||
Mfr: TK90S06N1L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 157W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 90 A | 3.3 mOhms | - 20 V, 20 V | 2.5 V | 81 nC | + 175 C | 157 W | Enhancement | AEC-Q101 | Reel | TK90S06N1L,LXHQ(O | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 15.8 A | 180 mOhms | - 30 V, 30 V | 3 V | 43 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 9.7 A | 350 mOhms | - 30 V, 30 V | 3 V | 25 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | |||||
Mfr: TK49N65W,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch Power MOSFET Transistor | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 49.2 A | 55 mOhms | - 30 V, 30 V | 2.5 V | 160 nC | + 150 C | 400 W | Enhancement | Tube | ||||||
Mfr: TK31Z60X,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-247-4L PD=230W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 600 V | 30.8 A | 88 mOhms | - 30 V, 30 V | 3.5 V | 65 nC | - 55 C | + 150 C | 230 W | Enhancement | DTMOSIV-H | Tube | ||||
Mfr: TK1R4S04PB,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 180W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 40 V | 120 A | 1.35 mOhms | - 20 V, 20 V | 3 V | 103 nC | + 175 C | 180 W | Enhancement | AEC-Q101 | Reel | TK1R4S04PB,LXHQ(O | ||||
Mfr: TK35A08N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh 10ohm VGS10V10uAVDS80V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 35 A | 10 mOhms | - 20 V, 20 V | 4 V | 25 nC | - 55 C | + 150 C | 30 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TK35N65W5,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NChtrr130ns 0.08ohm DTMOS | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 35 A | 80 mOhms | - 30 V, 30 V | 4.5 V | 115 nC | - 55 C | + 150 C | 270 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK72A08N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh 3.7ohm VGS10V10uAVDS80V | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 80 V | 72 A | 3.7 mOhms | - 20 V, 20 V | 4 V | 81 nC | - 55 C | + 150 C | 45 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TK4A53D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 4A 525V 35W 490pF 1.7 Ohm | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 525 V | 4 A | 1.7 Ohms | 35 W | MOSVII | |||||||||||
Mfr: TK6Q60W,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV 600V 820mOhm 6.2A 60W 390pF 12nC | 0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 600 V | 6.2 A | 680 mOhms | - 30 V, 30 V | 3.7 V | 12 nC | - 55 C | + 150 C | 60 W | DTMOSIV | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 60 A | 6.11 mOhms | - 20 V, 20 V | 3.5 V | 60 nC | - 55 C | + 175 C | 180 W | Enhancement | AEC-Q101 | Reel | |||||
Mfr: SSM3J66MFV,L3XHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs AUTO AEC-Q SS MOS P-ch Low Voltage Gate Drive VDSS:-20V Ic:-0.8A SOT-723 | 0In Stock | Si | SMD/SMT | VESM-3 | P-Channel | 1 Channel | 20 V | 800 mA | 480 mOhms | - 8 V, 6 V | 1 V | 1.6 nC | + 150 C | 500 mW | Enhancement | AEC-Q101 | Reel | SSM3J66MFV,L3XHF(B | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 15 A | 130 mOhms | - 20 V, 10 V | 4 V | 69 nC | - 55 C | + 175 C | 75 W | Enhancement | TJ15S10M3,LQ(O | ||||||
0In Stock | Si | SMD/SMT | UF-6 | P-Channel | 1 Channel | 30 V | 1.4 A | 226 mOhms | - 20 V, 20 V | 2 V | 2.9 nC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | ||||
0In Stock | Si | SMD/SMT | PS-8 | N-Channel | 1 Channel | 40 V | 5 A | 31.8 mOhms | - 20 V, 20 V | 2 V | 11.8 nC | - 55 C | + 175 C | 1.96 W | Enhancement | AEC-Q101 | U-MOSIV | Reel |
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