Toshiba - MOSFETs
3.364 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SSM3K16FV,L3F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=0.1A VDSS=20V | 0In Stock | Si | SMD/SMT | SOT-723-3 | N-Channel | 1 Channel | 20 V | 100 mA | 3 Ohms | - 10 V, 10 V | 600 mV | + 150 C | 150 mW | Enhancement | MOSVI | Reel | ||||||
Mfr: SSM3K376R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=4A VDSS=30V | 0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 30 V | 4 A | 56 mOhms | - 8 V, 12 V | 1 V | 2.2 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSVII-H | Reel | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 50 A | 6.1 mOhms | - 20 V, 20 V | 1.5 V | 28.3 nC | - 55 C | + 175 C | 36 W | Enhancement | U-MOSIX-H | Tube | |||||
0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 5.5 A | 29.8 mOhms | - 8 V, 6 V | 1 V | 12.8 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | ||||
Mfr: TJ30S06M3L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 68W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 30 A | 21.8 mOhms | - 20 V, 10 V | 3 V | 80 nC | + 175 C | 68 W | Enhancement | AEC-Q101 | Reel | TJ30S06M3L,LXHQ(O | ||||
0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 6 A | 23 mOhms | - 10 V, 10 V | 1 V | 16.6 nC | - 55 C | + 150 C | 2 W | Enhancement | U-MOSVII | Reel | |||||
Mfr: TPH3R70APL1,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 100V U-MOS IX-H SOP-Advance(N) 3.7mohm | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 100 V | 90 A | 6.2 mOhms | - 20 V, 20 V | 2.5 V | 67 nC | - 55 C | + 175 C | 210 W | Enhancement | Reel | |||||
Mfr: SSM3K357R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=.65A VDSS=60V | 0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 60 V | 650 mA | 1.8 Ohms | - 12 V, 12 V | 1.3 V | 1.5 nC | - 55 C | + 150 C | 1.5 W | Enhancement | AEC-Q101 | MOSV | Reel | |||
Mfr: TK12Q60W,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV 600V 340mOhm 11.5A 100W 890pF | 0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 600 V | 11.5 A | 265 mOhms | - 30 V, 30 V | 3.7 V | 25 nC | - 55 C | + 150 C | 100 W | DTMOSIV | Reel | |||||
Mfr: 2SK2009TE85LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch Sm Sig FET Id 0.2A 30V 20V | 0In Stock | Si | SMD/SMT | SOT-346-3 | N-Channel | 1 Channel | 30 V | 200 mA | 2 Ohms | - 20 V, 20 V | 1.5 V | - 55 C | + 150 C | 200 mW | Enhancement | Reel | ||||||
Mfr: TK20J50D(F) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs PD=280W VDS=500V N-Silicon N CH MOS | 0In Stock | Si | Through Hole | SC-65-3 | N-Channel | 1 Channel | 500 V | 20 A | 270 mOhms | - 30 V, 30 V | 2 V | 45 nC | + 150 C | 280 W | Enhancement | Tube | ||||||
Mfr: TK7A90E,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs PLN MOS 900V 2000m (VGS=10V) TO-220SIS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 900 V | 7 A | 1.6 Ohms | - 30 V, 30 V | 4 V | 32 nC | - 55 C | + 150 C | 45 W | Enhancement | MOSVIII | Tube | ||||
0In Stock | Si | SMD/SMT | UDFN-6 | P-Channel | 2 Channel | 20 V | 4 A | 157 mOhms | - 12 V, 6 V | 1.2 V | 6.74 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | ||||
Mfr: SSM6L40TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=1.6A VDSS=30V | 0In Stock | Si | SMD/SMT | UF-6 | N-Channel, P-Channel | 2 Channel | 30 V | 1.4 A, 1.6 A | 122 mOhms, 226 mOhms | - 20 V, 20 V | 1 V, 2 V | 5.1 nC, 2.9 nC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | |||
Mfr: TJ50S06M3L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 90W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 50 A | 13.8 mOhms | - 20 V, 10 V | 3 V | 124 nC | + 175 C | 90 W | Enhancement | AEC-Q101 | Reel | TJ50S06M3L,LXHQ(O | ||||
Mfr: SSM3K7002KF,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS Nch I: 0.4A, V: 60V, P: 270mW S-Min | 0In Stock | Si | SMD/SMT | S-Mini-3 | N-Channel | 1 Channel | 60 V | 400 mA | 1.75 Ohms | - 20 V, 20 V | 2.1 V | + 150 C | 900 mW | Enhancement | AEC-Q101 | Reel | ||||||
Mfr: SSM6N37FE(TE85L,F) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch FET MOS 1.5V Drive 20V 500mA | 0In Stock | Si | SMD/SMT | ES6-6 | N-Channel | 2 Channel | 20 V | 250 mA | - 10 V, 10 V | - 55 C | + 150 C | 150 mW | Reel | |||||||||
Mfr: TK2R9E10PL,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Power MOSFET ID=240A VDSS=100V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 240 A | 2.4 mOhms | - 20 V, 20 V | 1.5 V | 161 nC | - 55 C | + 175 C | 306 W | Enhancement | U-MOSIX-H | Tube | ||||
Mfr: SSM3J15F,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Sm-signal/Hi-Speed S-Mini (SOT-346) | 0In Stock | Si | SMD/SMT | SC-59-3 | P-Channel | 1 Channel | 30 V | 100 mA | 12 Ohms | - 20 V, 20 V | 1.7 V | + 150 C | 200 mW | Enhancement | AEC-Q101 | MOSVI | Reel | |||||
Mfr: SSM6N36TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Sm-signal/HiSpeed2n1 UF6 (SOT-363F) | 0In Stock | Si | SMD/SMT | UF-6 | N-Channel | 2 Channel | 20 V | 500 mA | 630 mOhms | - 5 V, 5 V | 1 V | 1.23 nC | + 150 C | 500 mW | Enhancement | AEC-Q101 | MOSIII | Reel | ||||
Mfr: SSM6J215FE(TE85L,F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch U-MOS VI FET ID -3.4A -20V 630pF | 0In Stock | Si | SMD/SMT | ES6-6 | P-Channel | 1 Channel | 20 V | 3.4 A | 154 mOhms | - 8 V, 8 V | 1 V | 10.4 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVI | Reel | ||||
Mfr: SSM6J414TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch U-MOS VI FET ID -6A -20V 1650pF | 0In Stock | Si | SMD/SMT | UF-6 | P-Channel | 1 Channel | 20 V | 6 A | 54 mOhms | - 8 V, 8 V | 1 V | 23.1 nC | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVI | Reel | ||||
Mfr: TPH4R50ANH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs U-MOSVIII-H 100V 93A 58nC MOSFET | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 100 V | 93 A | 4.5 mOhms | - 20 V, 20 V | 2 V | 58 nC | - 55 C | + 150 C | 78 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: TPN4R303NL,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs U-MOSVIII-H 30V 63A 6.8nC MOSFET | 0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 30 V | 63 A | 6.3 mOhms | - 20 V, 20 V | 2.3 V | 14.8 nC | - 55 C | + 150 C | 34 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: TPN7R506NH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs U-MOSVIII-H 30V 53A 24nC MOSFET | 0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 60 V | 53 A | 16 mOhms | - 20 V, 20 V | 4 V | 22 nC | - 55 C | + 150 C | 42 W | Enhancement | U-MOSVIII-H | Reel |
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