Toshiba - MOSFETs
3.364 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 30 A | 65 mOhms | - 30 V, 30 V | 4 V | 62 nC | - 55 C | + 150 C | 270 W | Enhancement | DTMOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 40 V | 150 A | 850 uOhms | - 20 V, 20 V | 1.4 V | 103 nC | - 55 C | + 175 C | 170 W | Enhancement | U-MOSIX-H | Reel | ||||
Mfr: TK12E80W,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 800V 1400pF 23nC 11.5A 165W | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 11.5 A | 380 mOhms | - 20 V, 20 V | 3 V | 23 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tube | |||
Mfr: SSM6K341NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=6A VDSS=100V | 0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel | 1 Channel | 60 V | 6 A | 28 mOhms | - 20 V, 20 V | 1.5 V | 9.3 nC | - 55 C | + 150 C | 1.25 W | Enhancement | U-MOSVIII-H | Reel | |||
Mfr: TK12A55D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 12A 550V 45W 1550pF 0.57 | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 550 V | 12 A | 570 mOhms | 45 W | MOSVII | Tube | |||||||||
Mfr: TK8A50DA(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 7.5A 500V 35W 700pF 1.04 Ohm | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 7.5 A | 760 mOhms | - 30 V, 30 V | 4.4 V | 16 nC | - 55 C | + 150 C | 35 W | Enhancement | MOSVII | Tube | |||
Mfr: TK5A65DA(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 4.5A 650V 35W 700pF 1.67 Ohm | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 5 A | 1.67 Ohms | - 30 V, 30 V | 2.4 V | 16 nC | - 55 C | + 150 C | 35 W | Enhancement | MOSVII | Tube | |||
Mfr: TK8A65D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch FET 650V 4.5s IDSS 10 uA 0.7 Ohm | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 8 A | 840 mOhms | - 30 V, 30 V | 2 V | 25 nC | - 55 C | + 150 C | 45 W | Enhancement | MOSVII | Tube | |||
Mfr: SSM6J502NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SM Sig P-CH MOS ID -6A -20V -8 VGSS | 0In Stock | Si | SMD/SMT | UDFN6B-6 | P-Channel | 1 Channel | 20 V | 6 A | 60.5 mOhms | - 8 V, 8 V | 1 W | U-MOSVI | Reel | ||||||||
Mfr: TK16A60W5,S4VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 15.8A 40W FET 600V 1350pF 43nC | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 600 V | 15.8 A | 190 mOhms | - 30 V, 30 V | 4.5 V | 43 nC | - 55 C | + 150 C | 40 W | Enhancement | DTMOSIV | Tube | |||
Mfr: SSM6N58NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch Sm Sig FET 4A 30V 2-in-1 | 0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel | 2 Channel | 30 V | 4 A | 112 mOhms | - 12 V, 12 V | 1 V | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVII-H | Reel | ||||
Mfr: TK58A06N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh 4.4ohm VGS10V10uAVDS60V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 58 A | 4.4 mOhms | - 20 V, 20 V | 4 V | 46 nC | - 55 C | + 150 C | 35 W | Enhancement | U-MOSVIII-H | Tube | |||
Mfr: TK33S10N1Z,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOSVIII 100V 10m max(VGS=10V) DPAK | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 33 A | 9.7 mOhms | - 20 V, 20 V | 2 V | 28 nC | - 55 C | + 175 C | 125 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | ||
Mfr: TK62N60X,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV-High Speed 600V 40mOhmmax | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 61.8 A | 33 mOhms | - 30 V, 30 V | 3.5 V | 135 nC | - 55 C | + 150 C | 400 W | Enhancement | DTMOSIV-H | Tube | |||
Mfr: TPH1R204PL,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs POWER MOSFET TRANSISTOR PD=132W | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 40 V | 150 A | 2.1 mOhms | - 20 V, 20 V | 1.4 V | 74 nC | - 55 C | + 175 C | 132 W | Enhancement | U-MOSIX-H | Reel | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 8 A | 440 mOhms | - 30 V, 30 V | 3 V | 22 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TPW1R005PL,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs POWER MOSFET TRANSISTOR PD=170W | 0In Stock | Si | SMD/SMT | DSOP-8 | N-Channel | 1 Channel | 45 V | 300 A | 1.65 mOhms | - 20 V, 20 V | 1.4 V | 122 nC | - 55 C | + 175 C | 170 W | Enhancement | U-MOSIX-H | Reel | |||
Mfr: SSM3K376R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS Low RON Nch Id: 4A Vdss: 30V Pd:1W | 0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 30 V | 4 A | 56 mOhms | - 8 V, 12 V | 1 V | 2.2 nC | + 150 C | 2 W | Enhancement | AEC-Q101 | Reel | ||||
0In Stock | Si | N-Channel | 1 Channel | U-MOSIII | Reel | ||||||||||||||||
Mfr: SSM3K335R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch U-MOSVI FET ID 6A 30VDSS 340pF | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 6 A | 56 mOhms | - 20 V, 20 V | 2.5 V | 2.7 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q100 | U-MOSVII-H | Reel | ||
Mfr: SSM6J505NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch U-MOS VI FET ID -12A -12V 1200pF | 0In Stock | Si | P-Channel | 1 Channel | U-MOSVI | Reel | |||||||||||||||
Mfr: TK31E60W,S1VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 30.8A 290W FET 600V 3000pF 86nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 30.8 A | 73 mOhms | - 30 V, 30 V | 3.7 V | 86 nC | - 55 C | + 150 C | 230 W | Enhancement | DTMOSIV | Tube | |||
Mfr: TK7P60W,RVQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 7A 60W FET 600V 490pF 15nC | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 7 A | 500 mOhms | - 30 V, 30 V | 3.7 V | 15 nC | - 55 C | + 150 C | 60 W | Enhancement | DTMOSIV | Reel | |||
Mfr: TK16G60W,RVQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV 600V 190mOhm 15.8A 130W 1350pF | 0In Stock | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 600 V | 15.8 A | 190 mOhms | - 30 V, 30 V | 3.7 V | 38 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | Reel | |||
0In Stock | Si | SMD/SMT | ES6-6 | N-Channel | 2 Channel | 20 V | 180 mA | 20 Ohms, 20 Ohms | - 10 V, 10 V | 400 mV | - 55 C | + 150 C | 150 mW | Enhancement | MOSVI | Reel |
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