Vishay - MOSFETs
8.235 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: SI4936CDY-T1-GE3 TTI: SI4936CDY-T1-GE3 Vishay Semiconductors Availability: 0In Stock30.000 On Order Expected MOSFETs 30V Vds 20V Vgs SO-8 | 0In Stock30.000 On Order Expected | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 5.8 A | 40 mOhms | 20 V | 3 V | 9 nC | - 55 C | + 150 C | 2.3 W | Enhancement | TrenchFET | Reel | SI4936CDY-GE3 | |||
Mfr: SI3127DV-T1-GE3 TTI: SI3127DV-T1-GE3 Vishay / Siliconix Availability: 0In Stock78.000 On Order Expected 25-Nov-27 MOSFETs -60V Vds 20V Vgs TSOP-6 | 0In Stock78.000 On Order Expected 25-Nov-27 | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 60 V | 5.1 A | 146 mOhms | 20 V | 3 V | 30 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI7461DP-T1-E3 TTI: SI7461DP-T1-E3 Vishay Semiconductors Availability: 0In Stock3.000 On Order Expected 25-Jul-29 MOSFETs -60V Vds 20V Vgs PowerPAK SO-8 | 0In Stock3.000 On Order Expected 25-Jul-29 | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 60 V | 14.4 A | 14.5 mOhms | 20 V | 3 V | 121 nC | - 55 C | + 150 C | 5.4 W | Enhancement | TrenchFET | Reel | SI7461DP-E3 | |||
Mfr: SI4288DY-T1-GE3 TTI: SI4288DY-T1-GE3 Vishay Semiconductors Availability: 0In Stock92.500 On Order Expected MOSFETs 40V Vds 20V Vgs SO-8 | 0In Stock92.500 On Order Expected | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 40 V | 9.2 A | 20 mOhms | 20 V | 1.2 V | 10 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4288DY-GE3 | |||
Mfr: SI2365EDS-T1-GE3 TTI: SI2365EDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 5.9 A | 26.5 mOhms | 8 V | 1 V | 13.8 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2365EDS-T1-BE3 SI4816DY-T1-E3-S | |||
Mfr: SI3476DV-T1-GE3 TTI: SI3476DV-T1-GE3 Vishay Semiconductors Availability: 0In Stock51.000 On Order Expected MOSFETs 80V Vds 20V Vgs TSOP-6 | 0In Stock51.000 On Order Expected | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 80 V | 4.6 A | 93 mOhms | 20 V | 1.2 V | 4.9 nC | - 55 C | + 150 C | 3.6 W | Enhancement | TrenchFET | Reel | SI3476DV-T1-BE3 | |||
Mfr: SIS443DN-T1-GE3 TTI: SIS443DN-T1-GE3 Vishay Semiconductors Availability: 0In Stock39.000 On Order Expected MOSFETs -40V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock39.000 On Order Expected | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 40 V | 35 A | 11.7 mOhms | 10 V | 1 V | 90 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI4946CDY-T1-GE3 TTI: SI4946CDY-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 60V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 60 V | 6.1 A | 51.6 mOhms | 20 V | 3 V | 2.4 nC | - 55 C | + 150 C | 2.8 W | Enhancement | Reel | |||||
Mfr: SI3433CDV-T1-GE3 TTI: SI3433CDV-T1-GE3 Vishay Semiconductors Availability: 0In Stock24.000 On Order Expected 26-Jun-29 MOSFETs -20V Vds 8V Vgs TSOP-6 | 0In Stock24.000 On Order Expected 26-Jun-29 | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 6 A | 38 mOhms | 8 V | 1 V | 18 nC | - 55 C | + 150 C | 3.3 W | Enhancement | TrenchFET | Reel | SI3433CDV-T1-BE3 SI3433CDV-GE3 | |||
Mfr: SI2323CDS-T1-GE3 TTI: SI2323CDS-T1-GE3 Vishay Semiconductors Availability: 0In Stock135.000 On Order Expected MOSFETs -20V Vds 8V Vgs SOT-23 | 0In Stock135.000 On Order Expected | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 6 A | 39 mOhms | 8 V | 1 V | 9 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2323CDS-T1-BE3 SI2323CDS-GE3 | |||
0In Stock30.000 On Order Expected | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 28 A | 77 mOhms | 20 V | 4 V | 72 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRF540PBF-BE3 | |||||
Mfr: SI7461DP-T1-GE3 TTI: SI7461DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -60V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 60 V | 14.4 A | 14.5 mOhms | 20 V | 3 V | 121 nC | - 55 C | + 150 C | 5.4 W | Enhancement | TrenchFET | Reel | SI7461DP-GE3 | |||
Mfr: SUD50P10-43L-E3 TTI: SUD50P10-43L-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V 37A 136W 43mohm @ 10V | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 37.1 A | 43 mOhms | 20 V | 1 V | 106 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | SUD50P10-43L-BE3 | |||
0In Stock1.050 On Order Expected 08-Sep-27 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 3.3 A | 1.5 Ohms | 20 V | 4 V | 8.2 nC | - 55 C | + 150 C | 36 W | Enhancement | Tube | IRF610PBF-BE3 | |||||
0In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 400 V | 1.8 A | 7 Ohms | 20 V | 4 V | 13 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | ||||||
Mfr: SI3585CDV-T1-GE3 TTI: SI3585CDV-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs TSOP-6 N&P PAIR | 0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel, P-Channel | 2 Channel | 20 V | 2.1 A, 3.9 A | 58 mOhms, 195 mOhms | 8 V | 600 mV | 3.2 nC, 6 nC | - 55 C | + 150 C | 1.3 W, 1.4 W | Enhancement | TrenchFET | Reel | SI3585CDV-GE3 | |||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 18 A | 180 mOhms | 20 V | 2 V | 70 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | ||||||
Mfr: SI4100DY-T1-GE3 TTI: SI4100DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 6.8 A | 63 mOhms | 20 V | 2 V | 20 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4100DY-GE3 | |||
Mfr: SIA910EDJ-T1-GE3 TTI: SIA910EDJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 12V Vds 8V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 2 Channel | 12 V | 4.5 A | 28 mOhms | 8 V | 400 mV | 16 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA910EDJ-GE3 | |||
Mfr: SI4564DY-T1-GE3 TTI: SI4564DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N/P-CH 40V SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel, P-Channel | 2 Channel | 40 V | 9.2 A, 10 A | 17.5 mOhms, 21 mOhms | 20 V | 800 mV, 1.2 V | 20.5 nC, 41.5 nC | - 55 C | + 150 C | 3.1 W, 3.2 W | Enhancement | TrenchFET | Reel | SI4542DY-T1-E3-S | |||
Mfr: SI7288DP-T1-GE3 TTI: SI7288DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 40 V | 20 A | 19 mOhms | 20 V | 1.2 V | 15 nC | - 55 C | + 150 C | 15.6 W | Enhancement | TrenchFET | Reel | SI7288DP-GE3 | |||
Mfr: SIR4409DP-T1-RE3 TTI: SIR4409DP-T1-RE3 Vishay / Siliconix Availability: 3.000In StockMOSFETs P-CH SINGLE -40V PPAK SO-8 | 3.000In Stock | Si | SMD/SMT | SO-8 | P-Channel | 1 Channel | 40 V | 60.6 A | 9 mOhms | 20 V | 2.3 V | 38.1 nC | - 55 C | + 150 C | 59.5 W | Enhancement | Reel | |||||
Mfr: SI2301CDS-T1-E3 TTI: SI2301CDS-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 3.1 A | 112 mOhms | 8 V | 400 mV | 10 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | SI2301CDS-T1-BE3 SI2301CDS-E3 | |||
Mfr: SI3459BDV-T1-GE3 TTI: SI3459BDV-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -60V Vds 20V Vgs TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 60 V | 2.9 A | 216 mOhms | 20 V | 3 V | 7.7 nC | - 55 C | + 150 C | 3.3 W | Enhancement | TrenchFET | Reel | SI3459BDV-T1-BE3 SI3459BDV-GE3 | |||
Mfr: SUD50N04-8M8P-4GE3 TTI: SUD50N04-8M8P-4GE3 Vishay Semiconductors MOSFETs 40V 50A 48.1W 8.8mohm @ 10V | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 40 V | 50 A | 8 mOhms | 20 V | 3 V | 37 nC | - 55 C | + 150 C | 48.1 W | Enhancement | TrenchFET | Reel | SUD50N04-8M8P-4BE3 |