Vishay - MOSFETs
8.235 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIA931DJ-T1-GE3 TTI: SIA931DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 30 V | 4.5 A | 65 mOhms | 20 V | 1.2 V | 13 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISS71DN-T1-GE3 TTI: SISS71DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -100V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 100 V | 23 A | 47 mOhms | 20 V | 2.5 V | 30 nC | - 50 C | + 150 C | 57 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
Mfr: SISA12ADN-T1-GE3 TTI: SISA12ADN-T1-GE3 Vishay Semiconductors Availability: 0In Stock39.000 On Order Expected 20-May-27 MOSFETs For New Design See: 78-SISHA12ADN-T1-GE3 | 0In Stock39.000 On Order Expected 20-May-27 | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 25 A | 3.2 mOhms | - 16 V, 20 V | 1.1 V | 45 nC | - 55 C | + 150 C | 28 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI7463ADP-T1-GE3 TTI: SI7463ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 40 V | 46 A | 10 mOhms | 20 V | 1.2 V | 96 nC | - 55 C | + 150 C | 39 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI2374DS-T1-GE3 TTI: SI2374DS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 5.9 A | 30 mOhms | 8 V | 1 V | 7.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2374DS-T1-BE3 | |||
Mfr: SIS407ADN-T1-GE3 TTI: SIS407ADN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 18 A | 9 mOhms | 8 V | 400 mV | 112 nC | - 55 C | + 150 C | 39.1 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI1034CX-T1-GE3 TTI: SI1034CX-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs SC89-6 | 0In Stock | Si | SMD/SMT | SC-89-6 | N-Channel | 2 Channel | 20 V | 610 mA | 396 mOhms | 8 V | 400 mV | 1.3 nC | - 55 C | + 150 C | 220 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SI7113ADN-T1-GE3 TTI: SI7113ADN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -100V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 100 V | 10.8 A | 132 mOhms | 20 V | 2.6 V | 10.9 nC | - 55 C | + 150 C | 27.8 W | Enhancement | Reel | |||||
Mfr: SIR580DP-T1-RE3 TTI: SIR580DP-T1-RE3 Vishay / Siliconix Availability: 0In Stock165.000 On Order Expected 03-Nov-27 MOSFETs N-CH SINGLE 80V PPAK SO-8 | 0In Stock165.000 On Order Expected 03-Nov-27 | Si | SMD/SMT | PowerPAK SO-8-8 | N-Channel | 1 Channel | 80 V | 146 A | 3.2 mOhms | 20 V | 4 V | 76 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI7450DP-T1-E3 TTI: SI7450DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs RECOMMENDED ALT SI74 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 200 V | 5.3 A | 80 mOhms | 20 V | 4.5 V | 42 nC | - 55 C | + 150 C | 5.2 W | Enhancement | TrenchFET | Reel | SI7450DP-E3 | |||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 2 A | 4.4 Ohms | 20 V | 4 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFRC20TRPBF-BE3 | |||||
0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 12 V | 12 A | 11 mOhms | 8 V | 850 mV | 80 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA447DJ-GE3 | ||||
Mfr: SI9926CDY-T1-GE3 TTI: SI9926CDY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 12V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 20 V | 8 A | 18 mOhms | 12 V | 600 mV | 22 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI9926CDY-GE3 | |||
Mfr: SI7850DP-T1-E3 TTI: SI7850DP-T1-E3 Vishay Semiconductors Availability: 0In Stock33.000 On Order Expected MOSFETs 60V Vds 20V Vgs PowerPAK SO-8 | 0In Stock33.000 On Order Expected | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 6.2 A | 22 Ohms | 20 V | 3 V | 18 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI7850DP-E3 | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 9.2 A | 270 mOhms | 20 V | 4 V | 16 nC | - 55 C | + 175 C | 60 W | Enhancement | Tube | IRF520PBF-BE3 | |||||
0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 100 V | 19 A | 200 mOhms | 20 V | 2 V | 61 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | ||||||
Mfr: IRFR9220TRPBF TTI: IRFR9220TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs P-CH SINGLE -200V TO252 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 200 V | 3.6 A | 1.5 Ohms | 20 V | 4 V | 20 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR9220TRPBF-BE3 | ||||
Mfr: SI2333CDS-T1-GE3 TTI: SI2333CDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 12V 5.1A 2.5W 35 mohms @ 4.5V | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 12 V | 7.1 A | 35 mOhms | 8 V | 1 V | 9 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2333CDS-T1-BE3 SI2333CDS-GE3 | |||
Mfr: IRFP350PBF TTI: IRFP350PBF Vishay Semiconductors Availability: 0In Stock2.475 On Order Expected MOSFETs N-CH SINGLE 400V TO247 | 0In Stock2.475 On Order Expected | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 400 V | 16 A | 300 mOhms | 20 V | 2 V | 150 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: SIR426DP-T1-GE3 TTI: SIR426DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 30 A | 10.5 mOhms | 20 V | 1.2 V | 31 nC | - 55 C | + 150 C | 41.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR426DP-GE3 | |||
Mfr: SI7469DP-T1-E3 TTI: SI7469DP-T1-E3 Vishay Semiconductors Availability: 0In Stock3.000 On Order Expected 30-Dec-26 MOSFETs -80V Vds 20V Vgs PowerPAK SO-8 | 0In Stock3.000 On Order Expected 30-Dec-26 | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 80 V | 28 A | 29 mOhms | 20 V | 3 V | 160 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7469DP-E3 | |||
Mfr: SI7489DP-T1-E3 TTI: SI7489DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -100V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 100 V | 28 A | 41 mOhms | 20 V | 1 V | 106 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7489DP-E3 | |||
Mfr: SI7997DP-T1-GE3 TTI: SI7997DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 2 Channel | 30 V | 60 A | 5.5 mOhms | 20 V | 2.2 V | 106 nC | - 55 C | + 150 C | 46 W | Enhancement | TrenchFET | Reel | SI7997DP-GE3 | |||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 8.5 A | 19.5 mOhms | 20 V | 1.2 V | 14.5 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4920DY-T1-E3-S | ||||
Mfr: SI4056DY-T1-GE3 TTI: SI4056DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs RECOMMENDED ALT SI40 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 11.1 A | 17 mOhms | 20 V | 1.5 V | 29.5 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4056DY-GE3 |