Vishay - MOSFETs
8.235 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRL640STRLPBF TTI: IRL640STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 200V 17 Amp | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 17 A | 180 mOhms | 10 V | 1 V | 66 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: IRFL014TRPBF TTI: IRFL014TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 60V 2.7 Amp | 0In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 60 V | 2.7 A | 200 mOhms | 20 V | 4 V | 11 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | IRFL014TRPBF-BE3 | ||||
Mfr: SI7117DN-T1-E3 TTI: SI7117DN-T1-E3 Vishay Semiconductors MOSFETs -150V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 150 V | 2.17 A | 1.2 Ohms | 20 V | 4.5 V | 7.7 nC | - 55 C | + 150 C | 12.5 W | Enhancement | TrenchFET | Reel | SI7117DN-E3 | |||
Mfr: SI1443EDH-T1-GE3 TTI: SI1443EDH-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 12V Vgs SC70-6 | 0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 30 V | 4 A | 43 mOhms | 12 V | 1.5 V | 28 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | SI1443EDH-T1-BE3 SI1443EDH-GE3 | |||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 650 V | 7 A | 600 mOhms | 30 V | 4 V | 24 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | ||||||
Mfr: SI7172ADP-T1-RE3 TTI: SI7172ADP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs 200V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 200 V | 17.2 A | 70 mOhms | 20 V | 4 V | 19.5 nC | - 55 C | + 150 C | 52 W | Enhancement | Reel | |||||
Mfr: SIRA99DP-T1-GE3 TTI: SIRA99DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs P-CH SINGLE -30V PPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 195 A | 1.7 mOhms | - 20 V, 16 V | 1 V | 172.5 nC | - 55 C | + 150 C | 104 W | Enhancement | PowerPAK | Reel | ||||
Mfr: SI8821EDB-T2-E1 TTI: SI8821EDB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 12V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 30 V | 2.3 A | 105 mOhms | 12 V | 1.3 V | 17 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR640ADP-T1-GE3 TTI: SIR640ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 100 A | 1.65 mOhms | 20 V | 900 mV | 90 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI2336DS-T1-BE3 TTI: SI2336DS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CHANNEL 30V (D-S) | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 5.2 A | 42 mOhms | 8 V | 1 V | 10 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI2336DS-T1-GE3 | |||
Mfr: IRF520PBF-BE3 TTI: IRF520PBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 100V TO220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 9.2 A | 270 mOhms | 20 V | 4 V | 16 nC | - 55 C | + 175 C | 60 W | Enhancement | Tube | IRF520PBF | ||||
Mfr: SIR578DP-T1-RE3 TTI: SIR578DP-T1-RE3 Vishay Availability: 0In StockMOSFETs N-CH SINGLE 150V PPAK SO-8 | 0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 150 V | 70.2 A | 8.8 mOhms | 10 V | 4 V | 24.5 nC | - 55 C | + 150 C | Enhancement | Reel | ||||||
Mfr: SIHF9620S-GE3 TTI: SIHF9620S-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs P-CH SINGLE -200V TO263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | Tube | |||||||||||||||||
Mfr: SIHF9630S-GE3 TTI: SIHF9630S-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -200V Vds 20V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 200 V | 6.5 A | 800 mOhms | 20 V | 4 V | 29 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 7 A | 600 mOhms | 30 V | 4 V | 20 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 47 A | 65 mOhms | 30 V | 4 V | 152 nC | - 55 C | + 150 C | 379 W | Enhancement | Tube | ||||||
Mfr: IRF820ALPBF TTI: IRF820ALPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 500V TO262 | 0In Stock | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 500 V | 2.5 A | 3 Ohms | 30 V | 2 V | 17 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 500 V | 2.4 A | 3 Ohms | 20 V | 2 V | 19 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | ||||||
Mfr: IRFU9210PBF TTI: IRFU9210PBF Vishay Semiconductors Availability: 0In StockMOSFETs P-Chan 200V 1.9 Amp | 0In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 200 V | 1.9 A | 3 Ohms | 20 V | 4 V | 8.9 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 23 A | 140 mOhms | 20 V | 2 V | 140 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | ||||||
Mfr: IRF9Z10PBF TTI: IRF9Z10PBF Vishay Semiconductors Availability: 0In StockMOSFETs RECOMMENDED ALT IRF9 | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 6.7 A | 500 mOhms | 20 V | 4 V | 12 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF9Z10PBF-BE3 | ||||
Mfr: IRFI9540GPBF TTI: IRFI9540GPBF Vishay Semiconductors Availability: 0In StockMOSFETs P-CH SINGLE -100V TO220 | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 13 A | 200 mOhms | 20 V | 4 V | 61 nC | - 55 C | + 175 C | 42 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 16 A | 400 mOhms | 30 V | 2 V | 120 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 8.1 A | 450 mOhms | 20 V | 2 V | 41 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | ||||||
Mfr: IRFU9220PBF TTI: IRFU9220PBF Vishay Semiconductors Availability: 0In StockMOSFETs P-CH SINGLE -200V TO251 | 0In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 200 V | 3.6 A | 1.5 Ohms | 20 V | 4 V | 20 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube |