Vishay - MOSFETs
8.167 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 3.1 A | 112 mOhms | - 8 V, 8 V | 1 V | 3.3 nC | - 55 C | + 150 C | 1.6 W | Enhancement | Reel | SI2301CDS-T1-GE3 | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 850 V | 16.3 A | 250 mOhms | - 30 V, 30 V | 4 V | 71 nC | - 55 C | + 150 C | 179 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SIHP35N60EF-GE3 TTI: SIHP35N60EF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 32 A | 97 mOhms | - 30 V, 30 V | 2 V | 134 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
Mfr: SIHD690N60E-GE3 TTI: SIHD690N60E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 600V DPAK (TO-252) N-CHANNEL | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 6.4 A | 700 mOhms | - 30 V, 30 V | 5 V | 8 nC | - 55 C | + 150 C | 62.5 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 150 A | 2.8 mOhms | - 20 V, 20 V | 2 V | 151.2 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Bulk | |||||
Mfr: SIHB125N60EF-GE3 TTI: SIHB125N60EF-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 600V TO263 | 0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 600 V | 25 A | 125 mOhms | - 30 V, 30 V | 5 V | 31 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 41 A | 68 mOhms | - 30 V, 30 V | 5 V | 51 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 900 V | 3.6 A | 3.7 Ohms | - 20 V, 20 V | 4 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBF30PBF-BE3 | |||||
Mfr: SI2307CDS-T1-E3 TTI: SI2307CDS-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 3.5 A | 88 mOhms | - 20 V, 20 V | 1 V | 4.1 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI2307CDS-T1-BE3 SI2307CDS-E3 | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 1.8 A | 6.5 Ohms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Tube | IRFBE20PBF-BE3 | |||||
Mfr: SI7812DN-T1-GE3 TTI: SI7812DN-T1-GE3 Vishay Semiconductors MOSFETs 75V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 75 V | 16 A | 37 mOhms | - 20 V, 20 V | 3 V | 16 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7812DN-GE3 | |||
Mfr: SISHA10DN-T1-GE3 TTI: SISHA10DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 30V PPAK1212-8SH | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 30 A | 3.7 mOhms | - 16 V, 20 V | 1.1 V | 34 nC | - 55 C | + 150 C | 39 W | Enhancement | PowerPAK | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 8 A | 391 mOhms | - 30 V, 30 V | 4 V | 28 nC | - 55 C | + 150 C | 78 W | Enhancement | Bulk | ||||||
Mfr: SI7464DP-T1-E3 TTI: SI7464DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 200 V | 1.8 A | 240 mOhms | - 20 V, 20 V | 2 V | 18 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | SI7464DP-T1 | |||
Mfr: SIRA18DDP-T1-UE3 TTI: SIRA18DDP-T1-UE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 30V PPAK SO-8 | 0In Stock | Reel | ||||||||||||||||||||
Mfr: SIRA52DP-T1-GE3 TTI: SIRA52DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 60 A | 1.7 mOhms | - 16 V, 20 V | 2.4 V | 150 nC | - 55 C | + 150 C | 48 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 1.45 mOhms | - 20 V, 20 V | 1.2 V | 130 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET, PowerPAK | Reel | |||||
0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 8 A | 34 mOhms | - 20 V, 20 V | 1 V | 11.5 nC | - 55 C | + 150 C | 4.2 W | Enhancement | Reel | SI3483CDV-T1-GE3 | |||||
Mfr: SIRA14DDP-T1-GE3 TTI: SIRA14DDP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 30V PPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK 1212-8 | N-Channel | 1 Channel | 30 V | 58 A | 5.1 mOhms | - 16 V, 20 V | 2.2 V | 19.4 nC | - 55 C | + 150 C | 31.2 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SUP90330E-GE3 TTI: SUP90330E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 200V Vds 20V Vgs TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 35.8 A | 31.2 mOhms | - 20 V, 20 V | 2 V | 32 nC | - 55 C | + 175 C | 125 W | Enhancement | ThunderFET | Tube | ||||
Mfr: IRFIBE20GPBF TTI: IRFIBE20GPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 800V TO220 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 1.4 A | 6.5 Ohms | - 20 V, 20 V | 2 V | 38 nC | - 55 C | + 150 C | 30 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 10 A | 200 mOhms | - 20 V, 20 V | 2 V | 11 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 100 V | 81 A | 6.1 mOhms | - 20 V, 20 V | 3 V | 73 nC | - 55 C | + 150 C | 100 W | Enhancement | PowerPAK | Reel | ||||||
Mfr: IRLIZ14GPBF TTI: IRLIZ14GPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 60V TO220 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 8 A | 200 mOhms | - 10 V, 10 V | 1 V | 8.4 nC | - 55 C | + 175 C | 25 W | Enhancement | Tube | |||||
Mfr: IRFR220TRLPBF TTI: IRFR220TRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 200V TO252 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 4.8 A | 800 mOhms | - 20 V, 20 V | 2 V | 14 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel |
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