Vishay - MOSFETs
8.235 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHB23N60E-GE3 TTI: SIHB23N60E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 650 V | 23 A | 158 mOhms | 30 V | 4 V | 63 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 8 V | 6 A | 30 mOhms | 5 V | 350 mV | 19.3 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 25.8 A | 11.2 mOhms | 25 V | 2.8 V | 153 nC | - 55 C | + 150 C | 6.9 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SIS427EDN-T1-GE3 TTI: SIS427EDN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -30V Vds 25V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 50 A | 21.3 mOhms | 25 V | 2.5 V | 66 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | PowerPAK 8 x 8 - 8 | N-Channel | 1 Channel | 600 V | 12 A | 208 mOhms | 30 V | 5 V | 23 nC | - 55 C | + 150 C | 89 W | Enhancement | Reel | ||||||
Mfr: SIJH800E-T1-GE3 TTI: SIJH800E-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 80V PPAK 8X8L | 0In Stock | Si | SMD/SMT | PowerPAK-8 | N-Channel | 1 Channel | 80 V | 299 A | 1.8 mOhms | 20 V | 4 V | 140 nC | - 55 C | + 175 C | 333 W | Enhancement | Reel | |||||
Mfr: SIR588DP-T1-RE3 TTI: SIR588DP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 80V PPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 80 V | 59.5 A | 7.2 mOhms | 20 V | 4 V | 18.7 nC | - 55 C | + 150 C | 59.5 W | Enhancement | Reel | |||||
Mfr: SISA10BDN-T1-GE3 TTI: SISA10BDN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 30V PPAK1212-8 | 0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 30 V | 26 A | 3.6 mOhms | - 16 V, 20 V | 2.4 V | 24.1 nC | - 55 C | + 150 C | 3.8 W | Enhancement | Reel | ||||||
Mfr: SISA14BDN-T1-GE3 TTI: SISA14BDN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 30V PPAK1212-8 | 0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 30 V | 21 A | 5.38 mOhms | - 16 V, 20 V | 2.2 V | 14 nC | - 55 C | + 150 C | 3.8 W | Enhancement | Reel | ||||||
Mfr: SIHP6N80AE-GE3 TTI: SIHP6N80AE-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 800V TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 5 A | 950 mOhms | 30 V | 4 V | 22.5 nC | - 55 C | + 150 C | 62.5 W | Enhancement | Reel | |||||
0In Stock | Si | Reel | ||||||||||||||||||||
Mfr: SI4090BDY-T1-GE3 TTI: SI4090BDY-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 100V SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 18.7 A | 11.3 mOhms | 20 V | 4 V | 42 nC | - 55 C | + 150 C | 7.4 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHA5N80AE-GE3 TTI: SIHA5N80AE-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 800V TO220FP | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 3 A | 1.35 Ohms | 30 V | 4 V | 11 nC | - 55 C | + 150 C | 29 W | Enhancement | Tube | |||||
Mfr: SIZ254DT-T1-GE3 TTI: SIZ254DT-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH DUAL 70V PPAIR 3X3S | 0In Stock | Si | SMD/SMT | PowerPAIR-3x3S-8 | N-Channel | 1 Channel | 70 V | 32.5 A | 16.1 mOhms | 20 V | 2.4 V | 13 nC | - 55 C | + 150 C | 33 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.16 A | 47 mOhms | 20 V | 3 V | 3 nC | - 55 C | + 150 C | 750 mW | Enhancement | Reel | SI2306BDS-T1-E3 | |||||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 60 V | 1.6 A | 345 mOhms | 20 V | 3 V | 2.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2309CDS-T1-GE3 | |||||
Mfr: SIR500DP-T1-RE3 TTI: SIR500DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 30V PPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 350.8 A | 470 uOhms | - 12 V, 16 V | 2.2 V | 120 nC | - 55 C | + 150 C | 104.1 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHH080N60E-T1-GE3 TTI: SIHH080N60E-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 600V PPAK 8X8 | 0In Stock | Si | SMD/SMT | PowerPAK 8x8-4 | N-Channel | 1 Channel | 600 V | 32 A | 80 mOhms | 30 V | 5 V | 42 nC | - 55 C | + 150 C | 184 W | Enhancement | Reel | |||||
Mfr: SIZ340DT-T1-GE3 TTI: SIZ340DT-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAIR 3 x 3 | 0In Stock | Si | SMD/SMT | PowerPAIR-3x3-8 | N-Channel | 2 Channel | 30 V | 30 A, 40 A | 9.5 mOhms, 5.1 mOhms | - 16 V, 20 V | 1 V | 19 nC, 35 nC | - 55 C | + 150 C | 16.7 W, 31 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 12 A | 380 mOhms | 30 V | 4 V | 29 nC | - 55 C | + 150 C | 33 W | Enhancement | Tube | ||||||
Mfr: SIRA54DP-T1-GE3 TTI: SIRA54DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 60 A | 2.35 mOhms | - 16 V, 20 V | 1.1 V | 104 nC | - 55 C | + 150 C | 36.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIAA40DJ-T1-GE3 TTI: SIAA40DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 40 V | 30 A | 12.5 mOhms | - 16 V, 20 V | 1 V | 24 nC | - 55 C | + 150 C | 19.2 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRF730PBF-BE3 TTI: IRF730PBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 400V TO220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 5.5 A | 1 Ohms | 20 V | 4 V | 38 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF730PBF | ||||
0In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 41 A | 68 mOhms | 30 V | 5 V | 27 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 25 A | 125 mOhms | 30 V | 5 V | 31 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube |