Vishay - MOSFETs
8.167 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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0In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 25 A | 125 mOhms | - 30 V, 30 V | 5 V | 31 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | |||||||
0In Stock | Si | Reel | ||||||||||||||||||||
Mfr: SIHK045N60EF-T1GE3 TTI: SIHK045N60EF-T1GE3 Vishay Semiconductors MOSFETs N-CH SINGLE 600V PPAK10X12 | 0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 80 V | 66 A | 12.5 mOhms | - 20 V, 20 V | 2.5 V | 45 nC | - 55 C | + 175 C | 135 W | Enhancement | Reel | |||||
Mfr: SUD23N06-31-T4-GE3 TTI: SUD23N06-31-T4-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-Channel 60-V (D-S) | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 21.4 A | 31 mOhms | - 20 V, 20 V | 1 V | 17 nC | - 55 C | + 150 C | 31.25 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHA20N50E-GE3 TTI: SIHA20N50E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 500V TO220FP | 0In Stock | Si | Through Hole | N-Channel | 1 Channel | 500 V | 19 A | 184 mOhms | - 30 V, 30 V | 4 V | 46 nC | - 55 C | + 150 C | 34 W | Enhancement | Tube | ||||||
Mfr: SIR184LDP-T1-RE3 TTI: SIR184LDP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 60V PPAKSO8 | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 60 V | - 20 V, 20 V | 3 V | - 55 C | + 175 C | Enhancement | Reel | |||||||||
Mfr: SIA811ADJ-T1-GE3 TTI: SIA811ADJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | PowerPAK-SC70-6 | P-Channel | 1 Channel | 20 V | 4.5 A | 116 mOhms | - 8 V, 8 V | 400 mV | 13 nC | - 55 C | + 150 C | 6.5 W | Enhancement | LITTLE FOOT, PowerPAK | Reel | SIA811ADJ-GE3 | |||
Mfr: SISS5812DN-T1-GE3 TTI: SISS5812DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 80V PPAK1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 80 V | 42.8 A | 13.5 mOhms | - 20 V, 20 V | 4 V | 10 nC | - 55 C | + 150 C | 44.6 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | SO-8S | N-Channel | 1 Channel | 60 V | 334 A | 1.2 mOhms | - 20 V, 20 V | 4 V | 81 nC | - 55 C | + 150 C | 240 W | Enhancement | Reel | ||||||
Mfr: SI2301HDS-T1-GE3 TTI: SI2301HDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs P-CH SINGLE -20V TO236 | 0In Stock | Reel | ||||||||||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 51 A | 50 mOhms | - 30 V, 30 V | 5 V | 130 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube | ||||||
Mfr: SIHB25N50E-GE3 TTI: SIHB25N50E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 500V Vds 30V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 550 V | 26 A | 145 mOhms | - 30 V, 30 V | 4 V | 57 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 64 A | 47 mOhms | - 30 V, 30 V | 4 V | 239 nC | - 55 C | + 150 C | 520 W | Enhancement | Tube | ||||||
Mfr: SIHP25N50E-GE3 TTI: SIHP25N50E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 500V Vds 30V Vgs TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 26 A | 145 mOhms | - 30 V, 30 V | 4 V | 57 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | SIHP25N50E-BE3 | ||||
Mfr: SI1469DH-T1-GE3 TTI: SI1469DH-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs SC70-6 | 0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 2.7 A | 155 mOhms | - 12 V, 12 V | 1.5 V | 8.5 nC | - 55 C | + 150 C | 2.78 W | Enhancement | TrenchFET | Reel | SI1469DH-T1-BE3 | |||
Mfr: SUD23N06-31L-T4-E3 TTI: SUD23N06-31L-T4-E3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH 60-V (D-S) 175C Logic Level | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 23 A | 31 mOhms | - 20 V, 20 V | 1 V | 17 nC | - 55 C | + 175 C | 100 W | Enhancement | TrenchFET | Reel | SUD23N06-31L-T4BE3 | |||
Mfr: SIHF640S-GE3 TTI: SIHF640S-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds 20V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 18 A | 180 mOhms | - 20 V, 20 V | 2 V | 70 nC | - 55 C | + 150 C | 130 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 24 A | 145 mOhms | - 30 V, 30 V | 4 V | 81 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | ||||||
Mfr: IRF9Z24PBF TTI: IRF9Z24PBF Vishay Semiconductors Availability: 0In StockMOSFETs P-CH SINGLE -60V TO220 | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 11 A | 280 mOhms | - 20 V, 20 V | 4 V | 19 nC | - 55 C | + 175 C | 2.5 W | Enhancement | Tube | IRF9Z24PBF-BE3 | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 5 A | 1.4 Ohms | - 30 V, 30 V | 2 V | 24 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 250 V | 4.1 A | 150 mOhms | - 20 V, 20 V | 2 V | 10.9 nC | - 55 C | + 150 C | 6 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 9.2 A | 750 mOhms | - 30 V, 30 V | 2 V | 49 nC | - 55 C | + 150 C | 170 W | Enhancement | Tube | ||||||
Mfr: IRF9Z14SPBF TTI: IRF9Z14SPBF Vishay Semiconductors Availability: 0In StockMOSFETs P-CH SINGLE -60V TO263 | 0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 60 V | 6.7 A | 500 mOhms | - 20 V, 20 V | 4 V | 12 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | |||||
Mfr: IRFR310TRLPBF TTI: IRFR310TRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 400V 1.7 Amp | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 400 V | 1.7 A | 3.6 Ohms | - 20 V, 20 V | 2 V | 12 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | |||||
Mfr: SI8916EDB-T6-E1 TTI: SI8916EDB-T6-E1 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH DUAL 20V MICROFOOT | 0In Stock | Si | SMD/SMT | MicroFOOT-4 | N-Channel | 2 Channel | 20 V | 2.5 A | 75 mOhms | 12 V | 1.4 V | 5.6 nC | - 55 C | + 150 C | 770 mW | Enhancement | Reel |
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