Vishay - MOSFETs
8.235 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 4.4 A | 61 mOhms | 8 V | 1 V | 7.6 nC | - 55 C | + 150 C | 1.8 W | Enhancement | Reel | SI2377EDS-T1-GE3 | |||||
Mfr: SI2392ADS-T1-BE3 TTI: SI2392ADS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 100V TO236 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 3.1 A | 126 mOhms | 20 V | 3 V | 2.9 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2392ADS-T1-GE3 | ||||
0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 30 V | 8 A | 26 mOhms | 20 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 3.6 W | Enhancement | Reel | SI3424CDV-T1-GE3 | |||||
0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 20 V | 7.9 A | 28 mOhms | 8 V | 1 V | 18 nC | - 55 C | + 150 C | 2.7 W | Enhancement | Reel | SI3460DDV-T1-GE3 | |||||
Mfr: SI4153DY-T1-GE3 TTI: SI4153DY-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs P-CH SINGLE -30V SOIC8 | 0In Stock | Si | SMD/SMT | SO-8 | P-Channel | 1 Channel | 30 V | 14.3 A | 9.5 mOhms | 25 V | 2.5 V | 31 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SC-75-6 | 1 Channel | 30 V | 4.3 A | 65 mOhms | 12 V | 1.3 V | 6.6 nC | - 55 C | + 150 C | 1.95 W | Enhancement | Reel | |||||||
Mfr: SIHG026N65E-GE3 TTI: SIHG026N65E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 700V TO-247AC | 0In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 650 V | 88 A | 26 mOhms | 30 V | 5 V | 157 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | |||||
Mfr: SIHG110N65SF-GE3 TTI: SIHG110N65SF-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 700V TO-247AC | 0In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 650 V | 33 A | 115 mOhms | 20 V | 5 V | 83 nC | - 55 C | + 150 C | 313 W | Enhancement | Tube | |||||
Mfr: SIRA18BDP-T1-UE3 TTI: SIRA18BDP-T1-UE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 30V PPK SO8 | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 6.83 mOhms | - 16 V, 20 V | 2.4 V | 12.2 nC | - 55 C | + 150 C | 17 W | Enhancement | Reel | |||||
Mfr: SISD4604DN-T1-UE3 TTI: SISD4604DN-T1-UE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 60V PPK 1212F | 0In Stock | Si | SMD/SMT | PowerPAK 1212-F-8 | N-Channel | 1 Channel | 60 V | 85 A | 3.9 mOhms | 20 V | 3.5 V | 32.5 nC | - 55 C | + 150 C | 57 W | Enhancement | Reel | |||||
Mfr: SISS78LDN-T1-BE3 TTI: SISS78LDN-T1-BE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 70V PPK 1212 8S | 0In Stock | Si | SMD/SMT | PowerPAK 1212-8S | N-Channel | 1 Channel | 70 V | 66.7 A | 5.8 mOhms | 20 V | 2.3 V | 32 nC | - 55 C | + 150 C | 57 W | Enhancement | Reel | |||||
Mfr: SI9945CDY-T1-GE3 TTI: SI9945CDY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs DUAL N-CHANNEL 60-V (D-S) MOSFET | 0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 2 Channel | 60 V | 7.9 A | 32 mOhms | 20 V | 3 V | 7.1 nC | - 55 C | + 150 C | 3.6 W | Enhancement | Reel | |||||
Mfr: SIJK4610-T1-GE3 TTI: SIJK4610-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CHANNEL 60-V (D-S) MOSFET | 0In Stock | Si | SMD/SMT | PowerPAK-8 | N-Channel | 1 Channel | 60 V | 461 A | 1.2 mOhms | 20 V | 3.5 V | 214 nC | - 55 C | + 150 C | 446 W | Enhancement | Reel | |||||
Mfr: SI7155DP-T1-UE3 TTI: SI7155DP-T1-UE3 Vishay / Siliconix Availability: 0In StockMOSFETs P-CH SINGLE -40V PPSO8 | 0In Stock | Si | SMD/SMT | SO-8 | P-Channel | 1 Channel | 40 V | 100 A | 0.0036 Ohms | 20 V | 2.3 V | 220 nC | - 55 C | + 150 C | 104 W | Enhancement | Reel | |||||
Mfr: SI2393DS-T1-BE3 TTI: SI2393DS-T1-BE3 Vishay Semiconductors Availability: 0In StockMOSFETs P-CH SINGLE -30V TO236 | 0In Stock | Reel | ||||||||||||||||||||
Mfr: SIHG100N65E-GE3 TTI: SIHG100N65E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 650V TO247AC | 0In Stock | Tube | ||||||||||||||||||||
Mfr: SISS5810DN-T1-GE3 TTI: SISS5810DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CHANNEL 80-V (D-S) MOSFET | 0In Stock | Si | SMD/SMT | PowerPAK 1212-8 | N-Channel | 1 Channel | 80 V | 51 A | 10 mOhms | 20 V | 4 V | 12.2 nC | - 55 C | + 150 C | 52 W | Enhancement | Reel | |||||
Mfr: SIEH4800EW-T1-GE3 TTI: SIEH4800EW-T1-GE3 Vishay Availability: 0In StockMOSFETs N-CH SINGLE 80V PPAK8X8BWL | 0In Stock | Si | SMD/SMT | PowerPAK-8 | N-Channel | 1 Channel | 80 V | 34 A | 1.15 mOhms | 20 V | 4 V | 278 nC | - 55 C | + 175 C | 3.4 W | Enhancement | Reel | |||||
Mfr: SIZF5300DT-T1-UE3 TTI: SIZF5300DT-T1-UE3 Vishay Semiconductors Availability: 0In StockMOSFETs DUAL N-CHANNEL 30-V (D-S) MOSFET | 0In Stock | Si | SMD/SMT | N-Channel | 2 Channel | 30 V | 125 A | 2.43 mOhms | - 12 V, 16 V | 2 V | 21 nC | - 55 C | + 150 C | 56.8 W | Enhancement | Reel | ||||||
Mfr: SIRA60DP-T1-UE3 TTI: SIRA60DP-T1-UE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-Channel 30 V (D-S) MOSFET 150 C 0.94 m 10V 1.35 m 4.5V | 0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 30 V | 100 A | 940 uOhms | - 16 V, 20 V | 2.2 V | 83 nC | - 55 C | + 150 C | 57 W | Enhancement | Reel | |||||
Mfr: SIR680LDP-T1-UE3 TTI: SIR680LDP-T1-UE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 80V PPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 130 A | 2.8 mOhms | 20 V | 2.5 V | 90 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHF9620S-GE3 TTI: SIHF9620S-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs P-CH SINGLE -200V TO263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | Tube | |||||||||||||||||
Mfr: SIHF9630S-GE3 TTI: SIHF9630S-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -200V Vds 20V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 200 V | 6.5 A | 800 mOhms | 20 V | 4 V | 29 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 7 A | 600 mOhms | 30 V | 4 V | 20 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 47 A | 65 mOhms | 30 V | 4 V | 152 nC | - 55 C | + 150 C | 379 W | Enhancement | Tube |
