Vishay - MOSFETs
8.167 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRF634STRLPBF TTI: IRF634STRLPBF Vishay / BC Components Availability: 0In StockMOSFETs N-CH SINGLE 250V TO263 | 0In Stock | Si | Reel | |||||||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 47 A | 65 mOhms | - 30 V, 30 V | 4 V | 152 nC | - 55 C | + 150 C | 379 W | Enhancement | Tube | ||||||
Mfr: SI8489EDB-T2-E1 TTI: SI8489EDB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs MICRO FOOT 1 x 1 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 20 V | 5.4 A | 36 mOhms | - 12 V, 12 V | 1.2 V | 27 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI8817DB-T2-E1 TTI: SI8817DB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 20 V | 2.9 A | 61 mOhms | - 8 V, 8 V | 1 V | 19 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SIA437DJ-T1-GE3 TTI: SIA437DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 29.7 A | 12 mOhms | - 8 V, 8 V | 900 mV | 90 nC | - 50 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIA921EDJ-T4-GE3 TTI: SIA921EDJ-T4-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -20V Vds 12V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 20 V | 4.5 A | 59 mOhms | - 12 V, 12 V | 500 mV | 23 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIJA72ADP-T1-GE3 TTI: SIJA72ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds; 16/-12V Vgs PowerPAK SO-8L | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 96 A | 3.42 mOhms | - 16 V, 20 V | 1 V | 50 nC | - 55 C | + 150 C | 56.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISA72ADN-T1-GE3 TTI: SISA72ADN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds; 20/-16V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK1212-8 | N-Channel | 1 Channel | 40 V | 94 A | 3.25 mOhms | - 16 V, 20 V | 1 V | 50 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRFU9220PBF TTI: IRFU9220PBF Vishay Semiconductors Availability: 0In StockMOSFETs P-CH SINGLE -200V TO251 | 0In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 200 V | 3.6 A | 1.5 Ohms | - 20 V, 20 V | 4 V | 20 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: SIHG186N60EF-GE3 TTI: SIHG186N60EF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 600V TO247AC | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 8.4 A | 168 mOhms | - 30 V, 30 V | 5 V | 32 nC | - 55 C | + 150 C | 156 W | Enhancement | Tube | |||||
Mfr: SIR416DP-T1-GE3 TTI: SIR416DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 50 A | 3.8 mOhms | - 20 V, 20 V | 1.2 V | 90 nC | - 55 C | + 150 C | 69 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR416DP-GE3 | |||
Mfr: SIZ902DT-T1-GE3 TTI: SIZ902DT-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAIR 6 x 5 | 0In Stock | Si | SMD/SMT | PowerPAIR-6x5-8 | N-Channel | 2 Channel | 30 V | 16 A | 12 mOhms, 6.4 mOhms | - 20 V, 20 V | 1 V | 21 nC, 65 nC | - 55 C | + 150 C | 29 W, 66 W | Enhancement | TrenchFET | Reel | SIZ902DT-GE3 | |||
Mfr: SIZ346DT-T1-GE3 TTI: SIZ346DT-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAIR 3 x 3 | 0In Stock | Si | SMD/SMT | PowerPAIR-3x3-8 | N-Channel | 2 Channel | 30 V | 17 A, 30 A | 11.5 mOhms, 28.5 mOhms | - 16 V, 20 V | 2.2 V, 2.4 V | 6.6 nC, 10 nC | - 55 C | + 150 C | 16 W, 16.7 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SUG80050E-GE3 TTI: SUG80050E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V Vds 20V Vgs TO-247 | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 100 A | 4.5 mOhms | - 20 V, 20 V | 2 V | 165 nC | - 55 C | + 175 C | 500 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 7 A | 600 mOhms | - 30 V, 30 V | 4 V | 20 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 100 V | 148 A | 3.6 mOhms | - 20 V, 20 V | 4 V | 40 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | ||||||
Mfr: SISS72DN-T1-GE3 TTI: SISS72DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK1212-8 | N-Channel | 1 Channel | 150 V | 25.5 A | 42 mOhms | - 20 V, 20 V | 2 V | 22 nC | - 55 C | + 150 C | 65.8 W | Enhancement | TrenchFET, ThunderFET, PowerPAK | Reel | ||||
Mfr: SIHF9630STRL-GE3 TTI: SIHF9630STRL-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -200V Vds 20V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 200 V | 6.5 A | 800 mOhms | - 20 V, 20 V | 4 V | 29 nC | - 55 C | + 150 C | 74 W | Enhancement | Reel | |||||
Mfr: SI2303CDS-T1-E3 TTI: SI2303CDS-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 2.7 A | 190 mOhms | - 20 V, 20 V | 1 V | 4 nC | - 55 C | + 150 C | 2.3 W | Enhancement | TrenchFET | Reel | SI2303CDS-T1-BE3 SI2303CDS-E3 | |||
0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 4.9 mOhms | - 20 V, 20 V | 2.4 V | 54 nC | - 55 C | + 175 C | 48 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | D²PAK-2 | N-Channel | 1 Channel | 650 V | 24 A | 156 mOhms | - 30 V, 30 V | 4 V | 81 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | ||||||
Mfr: SIHP11N80E-BE3 TTI: SIHP11N80E-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 850V TO220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 12 A | 380 mOhms | - 30 V, 30 V | 4 V | 88 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | SIHP11N80E-GE3 | ||||
Mfr: SIDR402EP-T1-RE3 TTI: SIDR402EP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 40 V | 291 A | 960 uOhms | - 16 V, 20 V | 2.3 V | 165 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 2.7 A | 190 mOhms | - 20 V, 20 V | 3 V | 2 nC | - 55 C | + 150 C | 2.3 W | Enhancement | Reel | SI2303CDS-T1-GE3 | |||||
Mfr: SIHB068N60EF-GE3 TTI: SIHB068N60EF-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 600V TO263 | 0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 600 V | 41 A | 68 mOhms | - 30 V, 30 V | 5 V | 51 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube |
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