Vishay - MOSFETs
8.235 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIR880DP-T1-GE3 TTI: SIR880DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 60 A | 4.9 mOhms | 20 V | 1.2 V | 74 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR880DP-GE3 | |||
Mfr: SI1467DH-T1-GE3 TTI: SI1467DH-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs SC70-6 | 0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 2.7 A | 150 mOhms | 8 V | 1 V | 13.5 nC | - 55 C | + 150 C | 2.8 W | Enhancement | TrenchFET | Reel | SI1467DH-T1-BE3 SI1405BDH-T1-GE3 SI1405DL-T1-GE3 | |||
Mfr: SI4228DY-T1-GE3 TTI: SI4228DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 25V Vds 12V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 25 V | 8 A | 18 mOhms | 12 V | 600 mV | 25 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4228DY-GE3 | |||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 35.6 A | 13 mOhms | 20 V | 2.5 V | 18.5 nC | - 55 C | + 150 C | 29.8 W | Enhancement | TrenchFET | Reel | SI7772DP-GE3 | ||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 2.8 mOhms | - 16 V, 20 V | 1.1 V | 51 nC | - 55 C | + 150 C | 40 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA10DP-GE3 | ||||
Mfr: SIS698DN-T1-GE3 TTI: SIS698DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | TrenchFET, PowerPAK | Reel | ||||||||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 33 A | 99 mOhms | 30 V | 4 V | 155 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube | ||||||
Mfr: SI8808DB-T2-E1 TTI: SI8808DB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 30 V | 2.5 A | 95 mOhms | 8 V | 400 mV | 10 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SI8425DB-T1-E1 TTI: SI8425DB-T1-E1 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 10V Vgs MICRO FOOT 1.6 x 1.6 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 20 V | 9.3 A | 40 mOhms | 10 V | 900 mV | 110 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIRA00DP-T1-GE3 TTI: SIRA00DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 1mOhm@10V 60A N-Ch G-IV | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 100 A | 830 uOhms | - 16 V, 20 V | 1.1 V | 220 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA00DP-GE3 | |||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 2.05 mOhms | - 16 V, 20 V | 1.1 V | 77 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA06DP-GE3 | ||||
Mfr: SIHF22N60E-GE3 TTI: SIHF22N60E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 21 A | 180 mOhms | 30 V | 4 V | 57 nC | - 55 C | + 150 C | 35 W | Enhancement | Tube | |||||
Mfr: SIHP12N60E-GE3 TTI: SIHP12N60E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 12 A | 380 mOhms | 30 V | 4 V | 29 nC | - 55 C | + 150 C | 147 W | Enhancement | Tube | SIHP12N60E-BE3 | ||||
Mfr: SI8487DB-T1-E1 TTI: SI8487DB-T1-E1 Vishay Semiconductors MOSFETs -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 30 V | 7.7 A | 25 mOhms | 12 V | 1.2 V | 80 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | SI8487DB-E1 | |||
Mfr: SIHB22N60E-GE3 TTI: SIHB22N60E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 650 V | 21 A | 180 mOhms | 30 V | 4 V | 57 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | |||||
Mfr: SIA527DJ-T1-GE3 TTI: SIA527DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -12V Vds 8V Vgs SC-70 N&P PAIR | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel, P-Channel | 2 Channel | 12 V | 4.5 A | 29 mOhms, 41 mOhms | 8 V | 400 mV | 15 nC, 26 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI3474DV-T1-GE3 TTI: SI3474DV-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 100V Vds 20V Vgs TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 100 V | 3.8 A | 126 mOhms | 20 V | 1.2 V | 10.4 nC | - 55 C | + 150 C | 3.6 W | Enhancement | TrenchFET | Reel | SI3474DV-T1-BE3 | |||
Mfr: SIA923AEDJ-T1-GE3 TTI: SIA923AEDJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V .054ohm@-4.5V -4.5A P-CH | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 20 V | 4.5 A | 44 mOhms | 8 V | 900 mV | 25 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SISA16DN-T1-GE3 TTI: SISA16DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-Ch PowerPAK1212 | 0In Stock | Si | TrenchFET, PowerPAK | Reel | ||||||||||||||||||
Mfr: SI4214DDY-T1-E3 TTI: SI4214DDY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 8.5 A | 19.5 mOhms | 20 V | 1.2 V | 22 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 25 V | 60 A | 960 uOhms | - 16 V, 20 V | 1 V | 105 nC | - 55 C | + 150 C | 54.3 W | Enhancement | TrenchFET, PowerPAK | Reel | |||||
Mfr: SI1078X-T1-GE3 TTI: SI1078X-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 12V Vgs SC89-6 | 0In Stock | Si | SMD/SMT | SC-89-6 | N-Channel | 1 Channel | 30 V | 1.02 A | 142 mOhms | 12 V | 600 mV | 6 nC | - 55 C | + 150 C | 240 mW | Enhancement | Reel | |||||
Mfr: SUD80460E-GE3 TTI: SUD80460E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 150V Vds 42A Id 10.5nC Qg Typ. | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 150 V | 42 A | 37.2 mOhms | 20 V | 4 V | 25 nC | - 55 C | + 175 C | 65.2 W | Enhancement | Reel | SUD80460E-BE3 | ||||
Mfr: SIHD6N65E-GE3 TTI: SIHD6N65E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 650V Vds 30V Vgs DPAK (TO-252) | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 650 V | 7 A | 600 mOhms | 30 V | 4 V | 24 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 12 A | 380 mOhms | 30 V | 4 V | 35 nC | - 55 C | + 150 C | 33 W | Enhancement | Tube |