Vishay - MOSFETs
8.235 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHB065N60E-T1-GE3 TTI: SIHB065N60E-T1-GE3 Vishay Availability: 0In StockMOSFETs N-CH SINGLE 600V TO263 | 0In Stock | Si | Reel | |||||||||||||||||||
Mfr: SI2318CDS-T1-BE3 TTI: SI2318CDS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 40V TO236 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 40 V | 5.6 A | 42 mOhms | 20 V | 2.5 V | 2.9 nC | - 55 C | + 150 C | 2.1 W | Enhancement | Reel | SI2318CDS-T1-GE3 | ||||
Mfr: SI2367DS-T1-BE3 TTI: SI2367DS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs P-CH SINGLE -20V TO236 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 3.8 A | 66 mOhms | 8 V | 1 V | 9 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2367DS-T1-GE3 | ||||
0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 8 A | 27.5 mOhms | 8 V | 900 mV | 26.2 nC | - 55 C | + 150 C | 2.97 W | Enhancement | Reel | SI3493BDV-T1-E3 | |||||
Mfr: SIHB22N65E-T1-GE3 TTI: SIHB22N65E-T1-GE3 Vishay Availability: 0In StockMOSFETs N-CH SINGLE 650V D2PAK | 0In Stock | Si | Reel | |||||||||||||||||||
Mfr: SQW33N65EF-GE3 TTI: SQW33N65EF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 650V TO-247AD | 0In Stock | Si | Through Hole | TO-247AD-3 | N-Channel | 2 Channel | 700 V | 34 A | 109 mOhms | 30 V | 4 V | 173 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIS108DN-T1-GE3 TTI: SIS108DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs Nch 80V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 80 V | 16 A | 34 mOhms | 20 V | 2 V | 13 nC | - 55 C | + 150 C | 24 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 40 A | 2.15 mOhms | - 16 V, 20 V | 1.1 V | 51 nC | - 55 C | + 150 C | 52 W | Enhancement | PowerPAK | Reel | |||||
Mfr: SISHA12ADN-T1-GE3 TTI: SISHA12ADN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 30V PPAK1212-8SH | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 25 A | 4.3 mOhms | - 16 V, 20 V | 1.1 V | 29.5 nC | - 55 C | + 150 C | 28 W | Enhancement | PowerPAK | Reel | ||||
Mfr: SIR846BDP-T1-RE3 TTI: SIR846BDP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CHANNEL 100-V(D-S) PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 65.8 A | 8 mOhms | 20 V | 4 V | 34.5 nC | - 55 C | + 150 C | 83.3 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHG33N65EF-GE3 TTI: SIHG33N65EF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 650V Vds 30V Vgs TO-247AC | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 31.6 A | 109 mOhms | 30 V | 2 V | 171 nC | - 55 C | + 150 C | 313 W | Enhancement | Tube | |||||
Mfr: SISS02DN-T1-GE3 TTI: SISS02DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 25V Vds 16V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 25 V | 80 A | 1.2 mOhms | - 12 V, 16 V | 1 V | 83 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIZ348DT-T1-GE3 TTI: SIZ348DT-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAIR 3 x 3 | 0In Stock | Si | SMD/SMT | PowerPAIR-3x3-8 | N-Channel | 2 Channel | 30 V | 30 A | 7.12 mOhms | - 16 V, 20 V | 1 V | 18.2 nC | - 55 C | + 150 C | 16.7 W | Enhancement | TrenchFET, PowerPAIR | Reel | ||||
Mfr: SIS472BDN-T1-GE3 TTI: SIS472BDN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 38.3 A | 7.5 mOhms | - 16 V, 20 V | 1.2 V | 21.5 nC | - 55 C | + 150 C | 19.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIAA00DJ-T1-GE3 TTI: SIAA00DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 25V Vds 16V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 25 V | 40 A | 5.6 mOhms | 10 V | 1 V | 15.7 nC | - 55 C | + 150 C | 19.2 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRF9610STRRPBF TTI: IRF9610STRRPBF Vishay / Siliconix Availability: 0In StockMOSFETs P-CH SINGLE -200V D2PAK | 0In Stock | Si | Reel | |||||||||||||||||||
Mfr: SIHA15N50E-GE3 TTI: SIHA15N50E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 500V TO220FP | 0In Stock | Si | Tube | |||||||||||||||||||
Mfr: SIHF9610STRR-GE3 TTI: SIHF9610STRR-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs P-CH SINGLE -200V TO263 | 0In Stock | Si | Reel | |||||||||||||||||||
Mfr: SI8457DB-T1-E1 TTI: SI8457DB-T1-E1 Vishay Semiconductors Availability: 0In StockMOSFETs -12V Vds 8V Vgs MICRO FOOT 1.6 x 1.6 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 12 V | 10.2 A | 15 mOhms | 8 V | 900 mV | 93 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHA25N50E-E3 TTI: SIHA25N50E-E3 Vishay / Siliconix Availability: 0In StockMOSFETs 500V Vds 30V Vgs TO-220 FULLPAK | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 550 V | 26 A | 145 mOhms | 30 V | 4 V | 57 nC | - 55 C | + 150 C | 35 W | Enhancement | Tube | |||||
Mfr: SIHF28N60EF-GE3 TTI: SIHF28N60EF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 28 A | 123 mOhms | 30 V | 2 V | 120 nC | - 55 C | + 150 C | 39 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 28 A | 123 mOhms | 30 V | 2 V | 120 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 19 A | 184 mOhms | 30 V | 4 V | 46 nC | - 55 C | + 150 C | 179 W | Enhancement | Bulk | ||||||
0In Stock | Si | SMD/SMT | PowerPAK-8 x 8 | N-Channel | 1 Channel | 600 V | 36 A | 71 mOhms | 30 V | 5 V | 50 nC | - 55 C | + 150 C | 202 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 650 V | 8.4 A | 193 mOhms | 30 V | 5 V | 32 nC | - 55 C | + 150 C | 156 W | Enhancement | Tube |