Vishay - MOSFETs
8.168 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI2374DS-T1-GE3 TTI: SI2374DS-T1-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs 20V Vds 8V Vgs SOT-23 | 6.000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 5.9 A | 30 mOhms | - 8 V, 8 V | 1 V | 7.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2374DS-T1-BE3 | |||
Mfr: IRFL210TRPBF TTI: IRFL210TRPBF Vishay Semiconductors Availability: 2.500In Stock65.000 On Order Expected MOSFETs N-Chan 200V 0.96 Amp | 2.500In Stock65.000 On Order Expected | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 200 V | 960 mA | 1.5 Ohms | - 20 V, 20 V | 4 V | 8.2 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | IRFL210TRPBF-BE3 | ||||
Mfr: SIR422DP-T1-GE3 TTI: SIR422DP-T1-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 6.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 20.5 A | 6.6 mOhms | - 20 V, 20 V | 1.2 V | 48 nC | - 55 C | + 150 C | 34.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR422DP-GE3 | |||
Mfr: IRF740STRLPBF TTI: IRF740STRLPBF Vishay Semiconductors Availability: 10.400In Stock21.600 On Order Expected MOSFETs N-CH SINGLE 400V TO263 | 10.400In Stock21.600 On Order Expected | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | - 20 V, 20 V | 2 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: SI4178DY-T1-GE3 TTI: SI4178DY-T1-GE3 Vishay Semiconductors Availability: 25.000In Stock15.000 On Order Expected 17-Sep-26 MOSFETs 30V Vds 25V Vgs SO-8 | 25.000In Stock15.000 On Order Expected 17-Sep-26 | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 12 A | 21 mOhms | - 20 V, 20 V | 1.4 V | 7.5 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4178DY-GE3 | |||
3.350In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | - 20 V, 20 V | 4 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF510PBF-BE3 | |||||
Mfr: SI3437DV-T1-E3 TTI: SI3437DV-T1-E3 Vishay Semiconductors Availability: 42.000In Stock45.000 On Order Expected MOSFETs -150V Vds 20V Vgs TSOP-6 | 42.000In Stock45.000 On Order Expected | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 150 V | 1.4 A | 750 mOhms | - 20 V, 20 V | 2 V | 12.2 nC | - 55 C | + 150 C | 3.2 W | Enhancement | TrenchFET | Reel | SI3437DV-T1-BE3 SI3437DV-E3 | |||
Mfr: SUD23N06-31-GE3 TTI: SUD23N06-31-GE3 Vishay Semiconductors Availability: 2.000In StockMOSFETs N-Ch MOSFET 60V 31 mohm @ 10V | 2.000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 21.4 A | 31 mOhms | - 20 V, 20 V | 1 V | 11 nC | - 55 C | + 150 C | 31.25 W | Enhancement | TrenchFET | Reel | SUD23N06-31-BE3 | |||
Mfr: SIS412DN-T1-GE3 TTI: SIS412DN-T1-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 6.000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 12 A | 24 mOhms | - 10 V, 10 V | 1 V | 8 nC | - 55 C | + 150 C | 10 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS412DN-GE3 | |||
Mfr: IRFP450PBF TTI: IRFP450PBF Vishay Semiconductors Availability: 800In StockMOSFETs N-CH SINGLE 500V TO247 | 800In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 14 A | 400 mOhms | - 20 V, 20 V | 2 V | 150 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: SI2306BDS-T1-E3 TTI: SI2306BDS-T1-E3 Vishay Semiconductors Availability: 9.000In Stock27.000 On Order Expected MOSFETs 30V 4.0A 0.75W | 9.000In Stock27.000 On Order Expected | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.16 A | 47 mOhms | - 20 V, 20 V | 1 V | 3 nC | - 55 C | + 150 C | 750 mW | Enhancement | TrenchFET | Reel | SI2306BDS-T1-BE3 SI2306BDS-E3 | |||
450In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 9.2 A | 270 mOhms | - 20 V, 20 V | 4 V | 16 nC | - 55 C | + 175 C | 60 W | Enhancement | Tube | IRF520PBF-BE3 | |||||
Mfr: SI7469DP-T1-E3 TTI: SI7469DP-T1-E3 Vishay Semiconductors Availability: 12.000In Stock12.000 On Order Expected MOSFETs -80V Vds 20V Vgs PowerPAK SO-8 | 12.000In Stock12.000 On Order Expected | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 80 V | 28 A | 29 mOhms | - 20 V, 20 V | 3 V | 160 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7469DP-E3 | |||
Mfr: IRFR110PBF TTI: IRFR110PBF Vishay Semiconductors Availability: 3.675In StockMOSFETs N-Chan 100V 4.3 Amp | 3.675In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 4.3 A | 540 mOhms | - 20 V, 20 V | 4 V | 8.3 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | IRFR110PBF-BE3 | ||||
Mfr: SIS892ADN-T1-GE3 TTI: SIS892ADN-T1-GE3 Vishay Semiconductors Availability: 27.000In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 27.000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 28 A | 27 mOhms | - 20 V, 20 V | 1.5 V | 19.5 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS892ADN-GE3 | |||
Mfr: SI7997DP-T1-GE3 TTI: SI7997DP-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs -30V Vds 20V Vgs PowerPAK SO-8 | 3.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 2 Channel | 30 V | 60 A | 5.5 mOhms | - 20 V, 20 V | 2.2 V | 106 nC | - 55 C | + 150 C | 46 W | Enhancement | TrenchFET | Reel | SI7997DP-GE3 | |||
Mfr: SUD19N20-90-E3 TTI: SUD19N20-90-E3 Vishay Semiconductors Availability: 8.000In StockMOSFETs N-CH SINGLE 200V TO-252 | 8.000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 19 A | 90 mOhms | - 20 V, 20 V | 4 V | 34 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | SUD19N20-90-BE3 | |||
Mfr: SIB441EDK-T1-GE3 TTI: SIB441EDK-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs -12V Vds 8V Vgs PowerPAK SC-75 | 3.000In Stock | Si | SMD/SMT | SC-75-6 | P-Channel | 1 Channel | 12 V | 9 A | 21 mOhms | - 8 V, 8 V | 900 mV | 33 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI1062X-T1-GE3 TTI: SI1062X-T1-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs 20V Vds 8V Vgs SC89-3 | 6.000In Stock | Si | SMD/SMT | SC-89-3 | N-Channel | 1 Channel | 20 V | 530 mA | 420 mOhms | - 8 V, 8 V | 400 mV | 2.7 nC | - 55 C | + 150 C | 220 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SUM90220E-GE3 TTI: SUM90220E-GE3 Vishay Semiconductors Availability: 800In StockMOSFETs 200V Vds 20V Vgs TO-263 | 800In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 64 A | 18 mOhms | - 20 V, 20 V | 2 V | 48 nC | - 55 C | + 175 C | 230 W | Enhancement | Reel | |||||
3.600In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | - 20 V, 20 V | 4 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF740PBF-BE3 SIHF740-E3 | |||||
Mfr: SI7137DP-T1-GE3 TTI: SI7137DP-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs -20V Vds 12V Vgs PowerPAK SO-8 | 3.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 20 V | 60 A | 1.95 mOhms | - 12 V, 12 V | 1.4 V | 390 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | SI7137DP-GE3 | |||
Mfr: IRFU9310PBF TTI: IRFU9310PBF Vishay Semiconductors Availability: 600In Stock3.000 On Order Expected 11-Jan-27 MOSFETs P-Chan 400V 1.8 Amp | 600In Stock3.000 On Order Expected 11-Jan-27 | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 400 V | 1.8 A | 7 Ohms | - 20 V, 20 V | 4 V | 13 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | |||||
Mfr: SI9407BDY-T1-E3 TTI: SI9407BDY-T1-E3 Vishay Semiconductors Availability: 5.000In StockMOSFETs -60V Vds 20V Vgs SO-8 | 5.000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 60 V | 4.7 A | 100 mOhms | - 20 V, 20 V | 1 V | 14.5 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI9407BDY-E3 | |||
Mfr: SISS60DN-T1-GE3 TTI: SISS60DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 30V PPAK1212-8SH | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 181.8 A | 1.31 mOhms | - 12 V, 16 V | 1 V | 57 nC | - 55 C | + 150 C | 65.8 W | Enhancement | PowerPAK | Reel |
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