Vishay - MOSFETs
8.235 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIR872ADP-T1-GE3 TTI: SIR872ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs RECOMMENDED ALT SIR6 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 53.7 A | 18 mOhms | 20 V | 2.5 V | 31.3 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 29 A | 88 mOhms | 30 V | 5 V | 35 nC | - 55 C | + 150 C | 208 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SIRA88BDP-T1-GE3 TTI: SIRA88BDP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 30V PPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 6.83 mOhms | - 16 V, 20 V | 2.4 V | 12.2 nC | - 55 C | + 150 C | 17 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 12 A | 380 mOhms | 30 V | 4 V | 88 nC | - 55 C | + 150 C | 34 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 5.4 A | 820 mOhms | 30 V | 4 V | 44 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel | ||||||
Mfr: SIJ150DP-T1-GE3 TTI: SIJ150DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 45-V (D-S) MOSFET N-CHANNEL PowerPAK | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 45 V | 110 A | 2.83 mOhms | - 16 V, 20 V | 2.3 V | 46.7 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SISS63DN-T1-GE3 TTI: SISS63DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs P-CHANNEL 20V PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK 1212-8S | P-Channel | 1 Channel | 20 V | 127.5 A | 2.7 mOhms | 12 V | 1.5 V | 72.2 nC, 157.2 nC | - 55 C | + 150 C | 65.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHU2N80AE-GE3 TTI: SIHU2N80AE-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 800V TO-251 | 0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 800 V | 2.9 A | 2.5 Ohms | 30 V | 4 V | 7 nC | - 55 C | + 155 C | 62.5 W | Enhancement | Reel | |||||
Mfr: SISS76LDN-T1-GE3 TTI: SISS76LDN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 70V PPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 70 V | 67.4 A | 5.2 mOhms | 12 V | 1.6 V | 22.3 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 8 A | 450 mOhms | 30 V | 2 V | 28 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | SIHD11N80AE | |||||
0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 150 V | 77.4 A | 7.9 mOhms | 20 V | 4 V | 46.9 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SIHG026N60EF-GE3 TTI: SIHG026N60EF-GE3 Vishay Availability: 0In StockMOSFETs N-CH SINGLE 600V TO-247AC | 0In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 600 V | 95 A | 26 mOhms | 30 V | 5 V | 151 nC | - 55 C | + 150 C | 521 W | Enhancement | Reel | |||||
Mfr: SIR182LDP-T1-RE3 TTI: SIR182LDP-T1-RE3 Vishay Availability: 0In StockMOSFETs N-CH SINGLE 60V PPAK SO-8 | 0In Stock | Si | Reel | |||||||||||||||||||
Mfr: SIR188LDP-T1-RE3 TTI: SIR188LDP-T1-RE3 Vishay Availability: 0In StockMOSFETs N-CH SINGLE 60V PPAK SO-8 | 0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 60 V | 93.6 A | 3.75 mOhms | 10 V | 2.5 V | 34.6 nC | - 55 C | + 150 C | Enhancement | PowerPAK | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | 20 V | 4 V | 60 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBC40PBF | |||||
Mfr: SIJA74DP-T1-GE3 TTI: SIJA74DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CHANNEL 40V (D-S) 150C MOSFET | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 40 V | 81.2 A | 3.99 mOhms | - 16 V, 20 V | 2.4 V | 27 nC | - 55 C | + 150 C | 46.2 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI3129DV-T1-GE3 TTI: SI3129DV-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs P-CH SINGLE -80V TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 80 V | 5.4 A | 82.7 mOhms | 20 V | 2.5 V | 12 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI2399DS-T1-BE3 TTI: SI2399DS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs P-CH SINGLE -20V TO236 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 6 A | 34 mOhms | 12 V | 1.5 V | 10 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2399DS-T1-GE3 | ||||
Mfr: SIR876BDP-T1-RE3 TTI: SIR876BDP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 100V PPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK SO-8-8 | N-Channel | 1 Channel | 100 V | 51.4 A | 12.3 mOhms | 20 V | 2.4 V | 65 nC | - 55 C | + 150 C | 71.4 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIS590DN-T1-GE3 TTI: SIS590DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N/P-CH 100V PPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK 1212-8 | N-Channel, P-Channel | 2 Channel | 100 V | 4 A | 186 mOhms, 338 mOhms | 20 V | 2.5 V | 9 nC, 22.4 nC | - 55 C | + 150 C | 17.9 W, 23.1 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SUM90100E-GE3 TTI: SUM90100E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 200V TO-263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 150 A | 12.9 mOhms | 20 V | 4 V | 110 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 150 A | 12.4 mOhms | 20 V | 4 V | 110 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 800 V | 5 A | 826 mOhms | 30 V | 4 V | 15 nC | - 55 C | + 150 C | 30 W | Enhancement | Bulk | ||||||
Mfr: SIA5213DJ-T1-GE3 TTI: SIA5213DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs P-CH SINGLE -20V PPK SC-70 | 0In Stock | Si | SMD/SMT | PowerPAK SC-70-7 | P-Channel | 1 Channel | 20 V | 36 A | 10 mOhms | 12 V | 1.5 V | 36 nC | - 55 C | + 150 C | 19 W | Enhancement | Reel | |||||
Mfr: SIR690DP-T1-BE3 TTI: SIR690DP-T1-BE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 200V PPK SO8 | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 200 V | 34.4 A | 35 mOhms | 20 V | 4 V | 31.9 nC | - 55 C | + 150 C | 104 W | Enhancement | Reel |