Vishay - MOSFETs
8.235 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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0In Stock | Si | Reel | ||||||||||||||||||||
Mfr: SIR624DP-T1-RE3 TTI: SIR624DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs 200V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 200 V | 18.6 A | 60 mOhms | 20 V | 2 V | 30 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8S-8 | P-Channel | 1 Channel | 30 V | 60 A | 4.6 mOhms | 25 V | 2.5 V | 74 nC | - 55 C | + 150 C | 65.8 W | Enhancement | TrenchFET, PowerPAK | Reel | |||||
Mfr: SIHA25N60EFL-E3 TTI: SIHA25N60EFL-E3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 650 V | 25 A | 127 mOhms | 30 V | 5 V | 50 nC | - 55 C | + 150 C | 39 W | Enhancement | Tube | |||||
Mfr: SIHG105N60EF-GE3 TTI: SIHG105N60EF-GE3 Vishay / Siliconix MOSFETs EF Series Pwr MOSFET w/Fast Body Diode | 0In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 29 A | 102 mOhms | 30 V | 5 V | 35 nC | - 55 C | + 150 C | 208 W | Enhancement | Tube | ||||||
Mfr: SI5458DU-T1-GE3 TTI: SI5458DU-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK ChipFET | 0In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel | 1 Channel | 30 V | 6 A | 41 mOhms | 20 V | 1.2 V | 9 nC | - 55 C | + 150 C | 10.4 W | Enhancement | TrenchFET | Reel | SI5458DU-GE3 | |||
Mfr: SIA421DJ-T1-GE3 TTI: SIA421DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 30 V | 12 A | 35 mOhms | 10 V | 1.5 V | 19 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA421DJ-GE3 | |||
Mfr: SI3493BDV-T1-GE3 TTI: SI3493BDV-T1-GE3 Vishay Semiconductors MOSFETs 20V 8.0A 2.97W 27.5mohm @ 4.5V | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 8 A | 27.5 mOhms | 8 V | 900 mV | 43.5 nC | - 55 C | + 150 C | 2.97 W | Enhancement | TrenchFET | Reel | SI3493BDV-T1-BE3 SI3493BDV-GE3 | |||
0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 19.2 A | 15.3 mOhms | 25 V | 2.6 V | 135 nC | - 55 C | + 150 C | 5.9 W | Enhancement | TrenchFET | Reel | SI4483ADY-GE3 | ||||
Mfr: SI7898DP-T1-GE3 TTI: SI7898DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 3 A | 85 mOhms | 20 V | 2 V | 17 nC | - 55 C | + 150 C | 1.9 W | Enhancement | TrenchFET | Reel | SI7898DP-GE3 | |||
0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 30 V | 6.3 A | 40 mOhms | 20 V | 1.2 V | 9 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | SI3456DDV-T1-BE3 SI3456DDV-E3 | ||||
Mfr: SI4124DY-T1-E3 TTI: SI4124DY-T1-E3 Vishay / Siliconix Availability: 0In StockMOSFETs 40V Vds 20V Vgs SO-8 | 0In Stock | Si | TrenchFET | Reel | SI4124DY-E3 | |||||||||||||||||
Mfr: SI4190ADY-T1-GE3 TTI: SI4190ADY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 18.4 A | 7.3 mOhms | 20 V | 1.5 V | 67 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4190ADY-GE3 | |||
Mfr: SIA923EDJ-T4-GE3 TTI: SIA923EDJ-T4-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 20 V | 4.5 A | 54 mOhms | 8 V | 500 mV | 25 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI8819EDB-T2-E1 TTI: SI8819EDB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs -12V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 12 V | 2.9 A | 80 mOhms | 8 V | 900 mV | 7 nC | - 55 C | + 150 C | 900 mW | Enhancement | Reel | |||||
Mfr: SUM40010EL-GE3 TTI: SUM40010EL-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 40 V | 120 A | 1.6 mOhms | 20 V | 1.2 V | 230 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHJ6N65E-T1-GE3 TTI: SIHJ6N65E-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 650V Vds 30V Vgs PowerPAK SO-8L | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 650 V | 5.6 A | 755 mOhms | 30 V | 4 V | 16 nC | - 55 C | + 150 C | 74 W | Enhancement | Reel | |||||
Mfr: SIJA54DP-T1-GE3 TTI: SIJA54DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8L | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 40 V | 60 A | 2.35 mOhms | - 16 V, 20 V | 2.4 V | 104 nC | - 55 C | + 150 C | 36.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIRA52DP-T1-GE3 TTI: SIRA52DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 60 A | 1.7 mOhms | - 16 V, 20 V | 2.4 V | 150 nC | - 55 C | + 150 C | 48 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SUP70060E-GE3 TTI: SUP70060E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 100V Vds 20V Vgs TO-220 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 131 A | 4.8 mOhms | 20 V | 2 V | 81 nC | - 55 C | + 175 C | 200 W | Enhancement | ThunderFET | Bulk | ||||
Mfr: SI7655ADN-T1-GE3 TTI: SI7655ADN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 40 A | 3.6 mOhms | 12 V | 500 mV | 150 nC | - 50 C | + 150 C | 57 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 46 A | 55 mOhms | 20 V | 2 V | 230 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 60 V | 7.7 A | 200 mOhms | 10 V | 1 V | 8.4 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Tube | ||||||
Mfr: IRLIZ14GPBF TTI: IRLIZ14GPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 60V TO220 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 8 A | 200 mOhms | 10 V | 1 V | 8.4 nC | - 55 C | + 175 C | 25 W | Enhancement | Tube | |||||
Mfr: IRFBC30APBF TTI: IRFBC30APBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 600V TO220 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 3.6 A | 2.2 Ohms | 30 V | 4.5 V | 23 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRFBC30APBF-BE3 |