MOSFETs
15.910 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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400In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 3.3 A | 1.8 Ohms | - 20 V, 20 V | 4 V | 20 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | IRF720PBF-BE3 | |||||
Mfr: SI7469DP-T1-E3 TTI: SI7469DP-T1-E3 Vishay Semiconductors Availability: 6.000In Stock18.000 On Order Expected MOSFETs -80V Vds 20V Vgs PowerPAK SO-8 | 6.000In Stock18.000 On Order Expected | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 80 V | 28 A | 29 mOhms | - 20 V, 20 V | 3 V | 160 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7469DP-E3 | |||
Mfr: SI3440ADV-T1-GE3 TTI: SI3440ADV-T1-GE3 Vishay Semiconductors Availability: 15.000In StockMOSFETs 150V Vds 20V Vgs TSOP-6 | 15.000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 150 V | 2.2 A | 380 mOhms | - 20 V, 20 V | 4 V | 1.65 nC | - 55 C | + 150 C | 3.6 W | Enhancement | ThunderFET | Reel | SI3440ADV-T1-BE3 | |||
Mfr: SIS892ADN-T1-GE3 TTI: SIS892ADN-T1-GE3 Vishay Semiconductors Availability: 33.000In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 33.000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 28 A | 27 mOhms | - 20 V, 20 V | 1.5 V | 19.5 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS892ADN-GE3 | |||
Mfr: SI4850EY-T1-E3 TTI: SI4850EY-T1-E3 Vishay Semiconductors Availability: 5.000In StockMOSFETs 60V Vds 20V Vgs SO-8 | 5.000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 60 V | 8.5 A | 22 mOhms | - 20 V, 20 V | 1 V | 27 nC | - 55 C | + 175 C | 3.3 W | Enhancement | TrenchFET | Reel | SI4850EY-E3 | |||
Mfr: IRF9640PBF TTI: IRF9640PBF Vishay Semiconductors Availability: 2.100In StockMOSFETs P-CH SINGLE -200V TO220 | 2.100In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 11 A | 500 mOhms | - 20 V, 20 V | 4 V | 44 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF9640PBF-BE3 | ||||
650In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 9.2 A | 270 mOhms | - 20 V, 20 V | 4 V | 16 nC | - 55 C | + 175 C | 60 W | Enhancement | Tube | IRF520PBF-BE3 | |||||
Mfr: SI7997DP-T1-GE3 TTI: SI7997DP-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs -30V Vds 20V Vgs PowerPAK SO-8 | 3.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 2 Channel | 30 V | 60 A | 5.5 mOhms | - 20 V, 20 V | 2.2 V | 106 nC | - 55 C | + 150 C | 46 W | Enhancement | TrenchFET | Reel | SI7997DP-GE3 | |||
Mfr: IRFR110PBF TTI: IRFR110PBF Vishay Semiconductors Availability: 3.675In StockMOSFETs N-Chan 100V 4.3 Amp | 3.675In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 4.3 A | 540 mOhms | - 20 V, 20 V | 4 V | 8.3 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | IRFR110PBF-BE3 | ||||
Mfr: SUD23N06-31-GE3 TTI: SUD23N06-31-GE3 Vishay Semiconductors Availability: 4.000In StockMOSFETs N-Ch MOSFET 60V 31 mohm @ 10V | 4.000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 21.4 A | 31 mOhms | - 20 V, 20 V | 1 V | 11 nC | - 55 C | + 150 C | 31.25 W | Enhancement | TrenchFET | Reel | SUD23N06-31-BE3 | |||
Mfr: SI3437DV-T1-E3 TTI: SI3437DV-T1-E3 Vishay Semiconductors Availability: 33.000In Stock30.000 On Order Expected 21-Dec-26 MOSFETs -150V Vds 20V Vgs TSOP-6 | 33.000In Stock30.000 On Order Expected 21-Dec-26 | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 150 V | 1.4 A | 750 mOhms | - 20 V, 20 V | 2 V | 12.2 nC | - 55 C | + 150 C | 3.2 W | Enhancement | TrenchFET | Reel | SI3437DV-T1-BE3 SI3437DV-E3 | |||
Mfr: SI4178DY-T1-GE3 TTI: SI4178DY-T1-GE3 Vishay Semiconductors Availability: 25.000In Stock15.000 On Order Expected 17-Sep-26 MOSFETs 30V Vds 25V Vgs SO-8 | 25.000In Stock15.000 On Order Expected 17-Sep-26 | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 12 A | 21 mOhms | - 20 V, 20 V | 1.4 V | 7.5 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4178DY-GE3 | |||
Mfr: SI2306BDS-T1-E3 TTI: SI2306BDS-T1-E3 Vishay Semiconductors Availability: 9.000In Stock18.000 On Order Expected MOSFETs 30V 4.0A 0.75W | 9.000In Stock18.000 On Order Expected | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.16 A | 47 mOhms | - 20 V, 20 V | 1 V | 3 nC | - 55 C | + 150 C | 750 mW | Enhancement | TrenchFET | Reel | SI2306BDS-T1-BE3 SI2306BDS-E3 | |||
Mfr: SIR422DP-T1-GE3 TTI: SIR422DP-T1-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 6.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 20.5 A | 6.6 mOhms | - 20 V, 20 V | 1.2 V | 48 nC | - 55 C | + 150 C | 34.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR422DP-GE3 | |||
Mfr: SI4909DY-T1-GE3 TTI: SI4909DY-T1-GE3 Vishay Semiconductors Availability: 2.500In StockMOSFETs -40V Vds 20V Vgs SO-8 | 2.500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 40 V | 8 A | 27 mOhms | - 20 V, 20 V | 1.2 V | 63 nC | - 55 C | + 150 C | 3.2 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SUD19P06-60-E3 TTI: SUD19P06-60-E3 Vishay Semiconductors Availability: 42.000In Stock36.000 On Order Expected MOSFETs 60V 19A 38.5W | 42.000In Stock36.000 On Order Expected | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 18.3 A | 60 mOhms | - 20 V, 20 V | 3 V | 40 nC | - 55 C | + 150 C | 38.5 W | Enhancement | TrenchFET | Reel | SUD19P06-60-BE3 | |||
Mfr: SIS412DN-T1-GE3 TTI: SIS412DN-T1-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 6.000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 12 A | 24 mOhms | - 10 V, 10 V | 1 V | 8 nC | - 55 C | + 150 C | 10 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS412DN-GE3 | |||
Mfr: SI7454DDP-T1-GE3 TTI: SI7454DDP-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 3.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 27.8 A | 27 mOhms | - 20 V, 20 V | 2.8 V | 19.5 nC | - 55 C | + 150 C | 35.7 W | Enhancement | TrenchFET | Reel | SI7454CDP-T1-GE3 | |||
Mfr: IRF740STRLPBF TTI: IRF740STRLPBF Vishay Semiconductors Availability: 10.400In Stock22.400 On Order Expected MOSFETs N-CH SINGLE 400V TO263 | 10.400In Stock22.400 On Order Expected | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | - 20 V, 20 V | 2 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
2.450In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | - 20 V, 20 V | 4 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF510PBF-BE3 | |||||
Mfr: IRFP450PBF TTI: IRFP450PBF Vishay Semiconductors Availability: 800In StockMOSFETs N-CH SINGLE 500V TO247 | 800In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 14 A | 400 mOhms | - 20 V, 20 V | 2 V | 150 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: SIR184DP-T1-RE3 TTI: SIR184DP-T1-RE3 Vishay / Siliconix Availability: 3.000In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8 | 3.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 73 A | 4.7 mOhms | - 20 V, 20 V | 2 V | 21 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISA12ADN-T1-GE3 TTI: SISA12ADN-T1-GE3 Vishay Semiconductors Availability: 45.000In Stock75.000 On Order Expected MOSFETs For New Design See: 78-SISHA12ADN-T1-GE3 | 45.000In Stock75.000 On Order Expected | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 25 A | 3.2 mOhms | - 16 V, 20 V | 1.1 V | 45 nC | - 55 C | + 150 C | 28 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI1967DH-T1-GE3 TTI: SI1967DH-T1-GE3 Vishay Semiconductors Availability: 21.000In Stock12.000 On Order Expected 25-Aug-26 MOSFETs -20V Vds 8V Vgs SC70-6 | 21.000In Stock12.000 On Order Expected 25-Aug-26 | Si | SMD/SMT | SOT-363-6 | P-Channel | 2 Channel | 20 V | 1.3 A | 490 mOhms | - 8 V, 8 V | 2.5 V | 4 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI1967DH-T1-BE3 SI1903DL-T1-GE3 | |||
Mfr: SI3457CDV-T1-GE3 TTI: SI3457CDV-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs -30V Vds 20V Vgs TSOP-6 | 3.000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 5.1 A | 74 mOhms | - 20 V, 20 V | 3 V | 15 nC | - 55 C | + 150 C | 3 W | Enhancement | TrenchFET | Reel | SI3457CDV-T1-BE3 SI3457BDV-T1-E3-S |
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