MOSFETs
15.954 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: SIHF730STRR-GE3 TTI: SIHF730STRR-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 400V TO263 | 0In Stock | Si | Reel | |||||||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 96 A | 24 mOhms | 20 V | 5 V | 145 nC | - 55 C | + 175 C | 600 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SI2369BDS-T1-BE3 TTI: SI2369BDS-T1-BE3 Vishay Semiconductors Availability: 0In StockMOSFETs P-CH SINGLE -30V TO236 | 0In Stock | Reel | ||||||||||||||||||||
Mfr: SI1411DH-T1-GE3 TTI: SI1411DH-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -150V Vds 20V Vgs SC70-6 | 0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 150 V | 520 mA | 2.7 Ohms | 20 V | 4.5 V | 6.3 nC | - 55 C | + 150 C | 1 W | Enhancement | TrenchFET | Reel | SI1411DH-T1-BE3 | |||
Mfr: SIHF9520STRL-GE3 TTI: SIHF9520STRL-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs P-CH SINGLE -100V TO263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | Reel | |||||||||||||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 140 A | 24 mOhms | 20 V | 3 V | 185 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 800 V | 44 A | 190 mOhms | 30 V | 3 V | 198 nC | - 55 C | + 150 C | 1.2 mW | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 250 V | 82 A | 35 mOhms | 20 V | 5 V | 142 nC | - 55 C | + 150 C | 500 W | Enhancement | PolarHT | Tube | |||||
Mfr: SI4932DY-T1-GE3 TTI: SI4932DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 8.0A 3.2W 15mohm @ 10V | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 8 A | 15 mOhms | 20 V | 1.2 V | 48 nC | - 55 C | + 150 C | 3.2 W | Enhancement | TrenchFET | Reel | SI4932DY-GE3 | |||
Mfr: IRF830ALPBF TTI: IRF830ALPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 500V 5.0 Amp | 0In Stock | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 500 V | 5 A | 1.4 Ohms | 30 V | 2 V | 24 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 400 mA | 80 Ohms | 20 V | 2 V | 5.8 nC | - 55 C | + 150 C | 25 W | Depletion | Tube | ||||||
Mfr: SIZ988DT-T1-GE3 TTI: SIZ988DT-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAIR 6 x 5 | 0In Stock | Si | SMD/SMT | PowerPAIR-6x5-8 | N-Channel | 2 Channel | 30 V | 40 A, 60 A | 5.7 mOhms, 2.8 mOhms | - 16 V, 20 V | 1.1 V, 1.2 V | 21.5 nC, 51 nC | - 55 C | + 150 C | 20.2 W, 40 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IXFP6N120P TTI: IXFP6N120P IXYS Availability: 0In StockMOSFETs POLAR HIPERFET WITH REDUCED RDS 1200V 6A | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 6 A | 2.75 Ohms | 30 V | 5 V | 92 nC | - 55 C | + 150 C | 250 W | Enhancement | HiPerFET | Tube | ||||
Mfr: SIHF9610S-GE3 TTI: SIHF9610S-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs P-CH SINGLE -200V TO263 | 0In Stock | Si | Tube | |||||||||||||||||||
Mfr: SIHFU210-GE3 TTI: SIHFU210-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 200V TO251 | 0In Stock | Si | Tube | |||||||||||||||||||
Mfr: SI5419DU-T1-GE3 TTI: SI5419DU-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs PowerPAK ChipFET | 0In Stock | Si | SMD/SMT | ChipFET-8 | P-Channel | 1 Channel | 30 V | 12 A | 33 mOhms | 20 V | 2.5 V | 45 nC | - 55 C | + 150 C | 31 W | Enhancement | TrenchFET | Reel | SI5419DU-GE3 | |||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 300 V | 36 A | 110 mOhms | 30 V | 3 V | 70 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 600 mA | 30 Ohms | 20 V | 2 V | 13.3 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | ||||||
Mfr: IRF820ASPBF TTI: IRF820ASPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 500V 2.5 Amp | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 2.5 A | 3 Ohms | 30 V | 2 V | 17 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 102 A | 18 mOhms | 20 V | 2.5 V | 87 nC | - 55 C | + 175 C | 455 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIHK045N60EF-T1GE3 TTI: SIHK045N60EF-T1GE3 Vishay Semiconductors MOSFETs N-CH SINGLE 600V PPAK10X12 | 0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 80 V | 66 A | 12.5 mOhms | 20 V | 2.5 V | 45 nC | - 55 C | + 175 C | 135 W | Enhancement | Reel | |||||
Mfr: SIR638DP-T1-GE3 TTI: SIR638DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 100 A | 880 uOhms | - 16 V, 20 V | 2.3 V | 204 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | HiPerFET | Tube | |||||||||||||||||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 250 V | 80 A | 13 mOhms | 20 V | 2.5 V | 83 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 18 A | 120 mOhms | 15 V | 4.5 V | 39 nC | - 55 C | + 150 C | 83 W | Enhancement | Tube |
