MOSFETs
16.468 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 30 A | 200 mOhms | 20 V | 4.5 V | 240 nC | - 55 C | + 150 C | 400 W | Enhancement | Linear L2 | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 4 A | 3.3 Ohms | 20 V | 6 V | 26 nC | - 55 C | + 150 C | 150 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 800 mA | 20 Ohms | 20 V | 4 V | 11.3 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 7 A | 1.9 Ohms | 30 V | - 55 C | + 150 C | 300 W | HiPerFET | Tube | ||||||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 50 V | 140 A | 9 mOhms | 15 V | 2 V | 200 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 600 V | 22 A | 350 mOhms | 30 V | 3 V | 62 nC | - 55 C | + 150 C | 400 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 1.2 A | 13 Ohms | 20 V | 2.5 V | 15.5 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 200 V | 24 A | 150 mOhms | 20 V | - 55 C | + 150 C | 300 W | Enhancement | Tube | ||||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 130 A | 8.5 mOhms | 30 V | - 55 C | + 175 C | 360 W | Enhancement | HiPerFET | Tube | |||||||
Mfr: TJ50S06M3L(T6L1,NQ TTI: TJ50S06M3L(T6L1,NQ Toshiba Availability: 0In StockMOSFETs P-Ch MOS -50A -60V 90W 6290pF 0.0138 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 50 A | 13.8 mOhms | - 20 V, 10 V | 3 V | 124 nC | - 55 C | + 175 C | 90 W | Enhancement | AEC-Q100 | U-MOSVI | Reel | |||
Mfr: TK8S06K3L(T6L1,NQ) TTI: TK8S06K3L(T6L1,NQ) Toshiba Availability: 0In StockMOSFETs N-Ch MOS 8A 60V 25W 400pF 0.054 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 8 A | 54 mOhms | 20 V | 2 V | 10 nC | - 55 C | + 175 C | 25 W | Enhancement | AEC-Q100 | U-MOSIV | Reel | |||
Mfr: SIHB22N60EF-GE3 TTI: SIHB22N60EF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs Nch 600V Vds 30V Vgs TO-263; w/diode | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 19 A | 182 mOhms | 30 V | 2 V | 96 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 8 A | 450 mOhms | 30 V | 2 V | 28 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | SIHG11N80AE | |||||
Mfr: SIHG052N60EF-GE3 TTI: SIHG052N60EF-GE3 Vishay / Siliconix MOSFETs EF Series Pwr MOSFET w/Fast Body Diode | 0In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 48 A | 52 mOhms | 30 V | 5 V | 67 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube | ||||||
Mfr: SIJA22DP-T1-GE3 TTI: SIJA22DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 25V PPAK SO-8L | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 25 V | 201 A | 740 uOhms | - 16 V, 20 V | 2.2 V | 83 nC | - 55 C | + 150 C | 48 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHA24N80AE-GE3 TTI: SIHA24N80AE-GE3 Vishay / Siliconix MOSFETs N-CHANNEL 800V E Series Pwr MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 9 A | 184 mOhms | 30 V | 4 V | 59 nC | - 55 C | + 150 C | 35 W | Enhancement | Reel | |||||
Mfr: SIHA14N60E-E3 TTI: SIHA14N60E-E3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 13 A | 269 mOhms | 30 V | 4 V | 32 nC | - 55 C | + 150 C | 147 W | Enhancement | Tube | |||||
Mfr: SIJ494DP-T1-GE3 TTI: SIJ494DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-Ch 150V Vds 16.1nC Qg Typ | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 150 V | 36.8 A | 19.3 mOhms | 20 V | 2.5 V | 31 nC | - 55 C | + 150 C | 69.4 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
Mfr: SUM90142E-GE3 TTI: SUM90142E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds 20V Vgs TO-263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 90 A | 12.3 mOhms | 20 V | 2 V | 87 nC | - 55 C | + 175 C | 375 W | Enhancement | ThunderFET | Reel | ||||
Mfr: SISA26DN-T1-GE3 TTI: SISA26DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 25V Vds 16V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 25 V | 60 A | 2.15 mOhms | - 12 V, 16 V | 1 V | 44 nC | - 55 C | + 150 C | 39 W | Enhancement | Reel | |||||
Mfr: SIHD14N60ET1-GE3 TTI: SIHD14N60ET1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 600V TO252 | 0In Stock | Si | Reel | |||||||||||||||||||
Mfr: SIRA50ADP-T1-RE3 TTI: SIRA50ADP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20/-16V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 219 A | 1.04 mOhms | - 16 V, 20 V | 1 V | 150 nC | - 55 C | + 150 C | 100 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHF065N60E-GE3 TTI: SIHF065N60E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 650V Vds; 30V Vgs TO-220 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 40 A | 65 mOhms | 30 V | 3 V | 74 nC | - 55 C | + 150 C | 39 W | Enhancement | Tube | |||||
Mfr: SISF00DN-T1-GE3 TTI: SISF00DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V (S1-S2) Cmn Drn PowerPAK 1212-8SCD | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8SCD-8 | N-Channel | 2 Channel | 30 V | 60 A | 4.2 mOhms | - 16 V, 20 V | 2.1 V | 53 nC | - 55 C | + 150 C | 69.4 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHG28N65EF-GE3 TTI: SIHG28N65EF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 650V Vds 30V Vgs TO-247AC | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 28 A | 117 mOhms | 30 V | 2 V | 146 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube |