MOSFETs
15.954 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: IXFK80N60P3 TTI: IXFK80N60P3 IXYS Availability: 0In StockMOSFETs 600V 80A 0.07Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 600 V | 80 A | 70 mOhms | 30 V | 5 V | 190 nC | - 55 C | + 150 C | 1.3 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: SI3457CDV-T1-E3 TTI: SI3457CDV-T1-E3 Vishay / Siliconix Availability: 0In StockMOSFETs -30V Vds 20V Vgs TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 5.1 A | 74 mOhms | 20 V | 3 V | 15 nC | - 55 C | + 150 C | 3 W | Enhancement | TrenchFET | Reel | SI3457CDV-T1-BE3 SI3457CDV-E3 | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 17 A | 100 mOhms | 20 V | 4 V | 25 nC | - 55 C | + 175 C | 60 W | Enhancement | Tube | IRFZ24PBF-BE3 | |||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 100 A | 2.4 mOhms | 20 V | 2 V | 105 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | |||||
Mfr: SIHK100N65E-T1-GE3 TTI: SIHK100N65E-T1-GE3 Vishay Availability: 0In StockMOSFETs E Series Power MOSFET 650 V (D-S) 150 C MOSFET 0.1 10V | 0In Stock | Si | SMD/SMT | PowerPAK-10x12 | N-Channel | 1 Channel | 650 V | 28 A | 100 mOhms | 30 V | 5 V | 41 nC | - 55 C | + 150 C | 184 W | Enhancement | Reel | |||||
Mfr: SIHB12N65E-GE3 TTI: SIHB12N65E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 650V Vds 30V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 700 V | 12 A | 380 mOhms | 30 V | 4 V | 35 nC | - 55 C | + 150 C | 156 W | Enhancement | Tube | |||||
Mfr: IXFX120N30P3 TTI: IXFX120N30P3 IXYS Availability: 0In StockMOSFETs N-Channel: Power MOSFET w/Fast Diode | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 120 A | 27 mOhms | 20 V | 3 V | 150 nC | - 55 C | + 150 C | 1.13 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: TPC8134,LQ(S TTI: TPC8134,LQ(S Toshiba Availability: 0In StockMOSFETs N-Ch -40V FET 1650pF -5A 1.9W 20nC | 0In Stock | Si | SMD/SMT | SOP-8 | P-Channel | 1 Channel | 40 V | 5 A | 66 mOhms | - 25 V, 20 V | 2 V | 20 nC | - 55 C | + 150 C | 1.9 W | Enhancement | U-MOSVI | Reel | ||||
Mfr: TK8S06K3L(T6L1,NQ) TTI: TK8S06K3L(T6L1,NQ) Toshiba Availability: 0In StockMOSFETs N-Ch MOS 8A 60V 25W 400pF 0.054 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 8 A | 54 mOhms | 20 V | 2 V | 10 nC | - 55 C | + 175 C | 25 W | Enhancement | AEC-Q100 | U-MOSIV | Reel | |||
Mfr: SIHF840ASTRR-GE3 TTI: SIHF840ASTRR-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 500V TO263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | Reel | |||||||||||||||||
Mfr: SIHFSL9N60A-GE3 TTI: SIHFSL9N60A-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 600V TO262 | 0In Stock | Si | Through Hole | TO-262-3 | Tube | |||||||||||||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 40 A | 170 mOhms | 20 V | 4.5 V | 320 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 4 A | 3.3 Ohms | 20 V | 6 V | 26 nC | - 55 C | + 150 C | 150 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SI4386DY-T1-E3 TTI: SI4386DY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 16A 3.1W 7.0mohm @ 10V | 0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 30 V | 16 A | 7 mOhms | 20 V | 2.5 V | 11 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4386DY-E3 | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 9.2 A | 750 mOhms | 30 V | 2 V | 49 nC | - 55 C | + 150 C | 170 W | Enhancement | Reel | ||||||
Mfr: SIR880BDP-T1-RE3 TTI: SIR880BDP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 80V PPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK SO-8-8 | N-Channel | 1 Channel | 80 V | 70.6 A | 8 mOhms | 20 V | 2.4 V | 66 nC | - 55 C | + 150 C | 71.4 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 650 V | 34 A | 100 mOhms | 20 V | 5.2 V | 29 nC | - 55 C | + 150 C | 446 W | Enhancement | Tube | ||||||
Mfr: SI2392BDS-T1-GE3 TTI: SI2392BDS-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 100V SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 2.3 A | 180 mOhms | 20 V | 3 V | 4.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 3.5 A | 88 mOhms | 20 V | 3 V | 4.1 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI2307CDS-T1-GE3 SI2307CDS-T1-E3 | ||||
Mfr: SIR800ADP-T1-GE3 TTI: SIR800ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 12V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 177 A | 1.35 mOhms | - 8 V, 12 V | 1.5 V | 53 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 36 A | 190 mOhms | 30 V | 3 V | 102 nC | - 55 C | + 150 C | 650 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 1.2 A | 13 Ohms | 20 V | 2.5 V | 15.5 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | ||||||
0In Stock | Si | TO-263-3 | Tube | |||||||||||||||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 8 A | 450 mOhms | 30 V | 2 V | 28 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | SIHB11N80AE | |||||
0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 800 V | 5 A | 950 mOhms | 30 V | 4 V | 15 nC | - 55 C | + 150 C | 62.5 W | Enhancement | Tube |