MOSFETs
16.468 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 60 V | 7.7 A | 200 mOhms | 20 V | 2 V | 11 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Tube | |||||
Mfr: TK8A50D(STA4,Q,M) TTI: TK8A50D(STA4,Q,M) Toshiba Availability: 0In StockMOSFETs N-Ch FET 500V 4.0s IDSS 10 uA 0.7 Ohm | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | 30 V | 2 V | 16 nC | - 55 C | + 150 C | 40 W | Enhancement | MOSVII | Reel | |||
Mfr: SIRS5100DP-T1-GE3 TTI: SIRS5100DP-T1-GE3 Vishay / Siliconix MOSFETs MOSFET N-Channel 100V (D-S), PowerPAK SO-8S, 2.5 mohm at 10V | 0In Stock | Si | SMD/SMT | SO-8S | N-Channel | 1 Channel | 100 V | 225 A | 2.5 mOhms | 20 V | 4 V | 68 nC | - 55 C | + 150 C | 240 W | Enhancement | Reel | ||||
Mfr: SIRS5702DP-T1-RE3 TTI: SIRS5702DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 150V PPAK SO-8S | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8S | N-Channel | 1 Channel | 150 V | 119 A | 7.2 mOhms | 20 V | 4 V | 58 nC | - 55 C | + 150 C | 245 W | Enhancement | TrenchFET | Reel | |||
Mfr: SIRA84BDP-T1-GE3 TTI: SIRA84BDP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 30V PPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 70 A | 7.1 mOhms | - 16 V, 20 V | 1.2 V | 20.7 nC | - 55 C | + 150 C | 36 W | Enhancement | TrenchFET | Reel | |||
Mfr: SIHG180N60E-GE3 TTI: SIHG180N60E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 650V Vds; 30V Vgs TO-247AC | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 19 A | 180 mOhms | 30 V | 3 V | 33 nC | - 55 C | + 150 C | 156 W | Enhancement | Tube | ||||
Mfr: SUP50010E-GE3 TTI: SUP50010E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds; 20V Vgs TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 150 A | 2 mOhms | 20 V | 2 V | 212 nC | - 55 C | + 175 C | 375 W | Enhancement | Tube | ||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 81.2 A | 4.2 mOhms | - 16 V, 20 V | 3.1 V | 41 nC | - 40 C | + 150 C | 46.2 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SUM70090E-GE3 TTI: SUM70090E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 100 V | 50 A | 8.9 mOhms | 20 V | 4 V | 33 nC | - 55 C | + 175 C | 125 W | Enhancement | ThunderFET | Reel | |||
Mfr: SIR516DP-T1-RE3 TTI: SIR516DP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100volts 63.7amp | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 100 V | 63.7 A | 9 mOhms | 20 V | 4 V | 23.6 nC | - 55 C | + 150 C | Enhancement | Reel | |||||
Mfr: SIR4604DP-T1-GE3 TTI: SIR4604DP-T1-GE3 Vishay Availability: 0In StockMOSFETs N-CH SINGLE 60V PPAKSO8 | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 60 V | 49.3 A | 9.5 mOhms | 20 V | 4 V | 14.5 nC | - 55 C | + 150 C | 41.6 W | Enhancement | Reel | ||||
Mfr: SIR5623DP-T1-RE3 TTI: SIR5623DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs P-Channel 60 V (D-S) MOSFET PowerPAK SO-8, 24 mohm a. 10V, 46 mohm a. 4.5V | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | P-Channel | 1 Channel | 60 V | 37.1 A | 24 mOhms | 20 V | 2.6 V | 21.8 nC | - 55 C | + 150 C | 59.5 W | Enhancement | Reel | ||||
Mfr: SIR5208DP-T1-RE3 TTI: SIR5208DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CHANNEL 20-V (D-S) 150C MOSFET | 0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 20 V | 165 A | 1.3 mOhms | - 7 V, 8 V | 1.3 V | 45 nC | - 55 C | + 150 C | 56.8 W | Enhancement | Reel | ||||
Mfr: SISS30LDN-T1-UE3 TTI: SISS30LDN-T1-UE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-Channel 80 V (D-S) MOSFET 150 C 8.5 m 10V 12.2 m 4.5V | 0In Stock | Si | SMD/SMT | PowerPAK-8 | N-Channel | 1 Channel | 80 V | 55.5 A | 8.5 mOhms | 20 V | 2.5 V | 32.5 nC | - 55 C | + 150 C | 57 W | Enhancement | Reel | ||||
Mfr: SIA4265EDJ-T1-GE3 TTI: SIA4265EDJ-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs P-CH SINGLE -20V PPAKSC-70-6L | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 7.8 A | 32 mOhms | 8 V | 1 V | 13.8 nC | - 55 C | + 150 C | 2.9 W | Enhancement | Reel | ||||
Mfr: SIHG24N80AEF-GE3 TTI: SIHG24N80AEF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 800V TO-247 | 0In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 800 V | 20 A | 170 mOhms | 30 V | 4 V | 60 nC | - 55 C | + 150 C | 208 W | Enhancement | Tube | ||||
Mfr: SISS54DN-T1-GE3 TTI: SISS54DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 30V PPAK1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 30 V | 185.6 A | 1.06 mOhms | - 12 V, 16 V | 2.2 V | 47.5 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET | Reel | |||
0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 60 V | 20 V | 3 V | - 55 C | + 175 C | Enhancement | Reel | |||||||||
Mfr: SIA112LDJ-T1-GE3 TTI: SIA112LDJ-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 100V PPAKSC-70-6L | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 100 V | 8.8 A | 119 mOhms | 20 V | 2.5 V | 2.7 nC | - 55 C | + 150 C | 15 W | Enhancement | Reel | ||||
Mfr: SIS888DN-T1-GE3 TTI: SIS888DN-T1-GE3 Vishay Semiconductors MOSFETs 150V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 150 V | 20.2 A | 58 mOhms | 20 V | 3 V | 14.5 nC | - 55 C | + 150 C | 52 W | Enhancement | ThunderFET | Reel | |||
Mfr: SI4103DY-T1-GE3 TTI: SI4103DY-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 16 A | 7.9 mOhms | 20 V | 1 V | 140 nC | - 55 C | + 150 C | 5.2 W | Enhancement | Reel | ||||
Mfr: SI4459BDY-T1-GE3 TTI: SI4459BDY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 16V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 27.8 A | 4.6 mOhms | 20 V | 1 V | 56 nC | - 55 C | + 150 C | 5.6 W | Enhancement | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 100 A | 13.5 mOhms | 20 V | 4.5 V | 122 nC | - 55 C | + 150 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | HiPerFET | Tube | ||||||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 56 A | 27 mOhms | 20 V | 2.5 V | 56 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube |