MOSFETs
15.954 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRFB9N60APBF TTI: IRFB9N60APBF Vishay Semiconductors Availability: 800In StockMOSFETs N-CH SINGLE 600V TO220 | 800In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 9.2 A | 750 mOhms | 30 V | 4 V | 49 nC | - 55 C | + 150 C | 170 W | Enhancement | Tube | IRFB9N60APBF-BE3 | ||||
1.000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 5.2 A | 800 mOhms | 20 V | 4 V | 14 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | IRF620PBF-BE3 | |||||
Mfr: IRFP360PBF TTI: IRFP360PBF Vishay Semiconductors Availability: 1.500In Stock1.000 On Order Expected 25-Jan-27 MOSFETs N-CH SINGLE 400V TO247 | 1.500In Stock1.000 On Order Expected 25-Jan-27 | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 400 V | 23 A | 200 mOhms | 20 V | 2 V | 210 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: SI9407BDY-T1-E3 TTI: SI9407BDY-T1-E3 Vishay Semiconductors Availability: 5.000In StockMOSFETs -60V Vds 20V Vgs SO-8 | 5.000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 60 V | 4.7 A | 100 mOhms | 20 V | 1 V | 14.5 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI9407BDY-E3 | |||
Mfr: SUM90220E-GE3 TTI: SUM90220E-GE3 Vishay Semiconductors Availability: 800In StockMOSFETs 200V Vds 20V Vgs TO-263 | 800In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 64 A | 18 mOhms | 20 V | 2 V | 48 nC | - 55 C | + 175 C | 230 W | Enhancement | Reel | |||||
Mfr: IXFH15N100Q3 TTI: IXFH15N100Q3 IXYS Availability: 60In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/15A | 60In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 15 A | 1.05 Ohms | 30 V | 6.5 V | 64 nC | - 55 C | + 150 C | 690 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IRF510SPBF TTI: IRF510SPBF Vishay Semiconductors Availability: 1.300In StockMOSFETs N-Chan 100V 5.6 Amp | 1.300In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | 20 V | 2 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF510PBF | ||||
Mfr: IRFBF20SPBF TTI: IRFBF20SPBF Vishay Semiconductors Availability: 1.000In StockMOSFETs N-CH SINGLE 900V TO263 | 1.000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 900 V | 1.7 A | 8 Ohms | 20 V | 2 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Tube | |||||
Mfr: SI3932DV-T1-GE3 TTI: SI3932DV-T1-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs 30V Vds 20V Vgs TSOP-6 | 6.000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 2 Channel | 30 V | 3.7 A | 58 mOhms | 20 V | 1.2 V | 6 nC | - 55 C | + 150 C | 1.4 W | Enhancement | TrenchFET | Reel | SI3932DV-GE3 | |||
Mfr: SUD15N15-95-E3 TTI: SUD15N15-95-E3 Vishay Semiconductors Availability: 4.000In StockMOSFETs RECOMMENDED ALT SUD1 | 4.000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 150 V | 15 A | 95 mOhms | 20 V | 2 V | 25 nC | - 55 C | + 175 C | 62 W | Enhancement | TrenchFET | Reel | SUD15N15-95-BE3 | |||
Mfr: SUM60020E-GE3 TTI: SUM60020E-GE3 Vishay / Siliconix Availability: 800In StockMOSFETs N-CH SINGLE 80V TO263 | 800In Stock | Si | SMD/SMT | TO-263-4 | N-Channel | 1 Channel | 80 V | 150 A | 2.47 mOhms | 20 V | 2 V | 151.2 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SISS26LDN-T1-GE3 TTI: SISS26LDN-T1-GE3 Vishay / Siliconix Availability: 6.000In StockMOSFETs Nch 60V Vds 20V Vgs PowerPAK 1212-8S | 6.000In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 60 V | 81.2 A | 4.3 mOhms | 20 V | 1 V | 48 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI7252ADP-T1-GE3 TTI: SI7252ADP-T1-GE3 Vishay / Siliconix Availability: 3.000In StockMOSFETs N-CH DUAL 100V PPAK SO-8 | 3.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 100 V | 28.7 A | 18.6 mOhms | 20 V | 4 V | 17.4 nC | - 55 C | + 150 C | 33.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SISH892BDN-T1-GE3 TTI: SISH892BDN-T1-GE3 Vishay / Siliconix Availability: 9.000In StockMOSFETs N-CH SINGLE 100V PPAK1212-8SH | 9.000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 20 A | 30.4 mOhms | 20 V | 2.4 V | 17.4 nC | - 55 C | + 150 C | 29 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFBG20PBF TTI: IRFBG20PBF Vishay Semiconductors Availability: 450In StockMOSFETs RECOMMENDED ALT IRFB | 450In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 1.4 A | 11 Ohms | 20 V | 4 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Tube | IRFBG20PBF-BE3 | ||||
Mfr: SI6562CDQ-T1-GE3 TTI: SI6562CDQ-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs -20V Vds 12V Vgs TSSOP-8 N&P PAIR | 3.000In Stock | Si | SMD/SMT | TSSOP-8 | N-Channel, P-Channel | 2 Channel | 20 V | 6.1 A, 6.7 A | 22 mOhms, 30 mOhms | 8 V | 600 mV | 15 nC, 34 nC | - 55 C | + 150 C | 1.6 W, 1.7 W | Enhancement | TrenchFET | Reel | SI6562CDQ-GE3 | |||
Mfr: SIR622DP-T1-RE3 TTI: SIR622DP-T1-RE3 Vishay / Siliconix Availability: 6.000In StockMOSFETs 150V Vds; 20V Vgs PowerPAK SO-8 | 6.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 51.6 A | 17.7 mOhms | 20 V | 2.5 V | 41 nC | - 55 C | + 150 C | 104 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
Mfr: SIDR5102EP-T1-RE3 TTI: SIDR5102EP-T1-RE3 Vishay Availability: 3.000In StockMOSFETs N-CH SINGLE 100V PPAKSO8DC | 3.000In Stock | Si | 100 V | 8.9 A | 5.6 mOhms | 20 V | 4 V | 20 nC | - 55 C | + 175 C | 7.5 W | Reel | ||||||||||
Mfr: SUM110P08-11L-E3 TTI: SUM110P08-11L-E3 Vishay / Siliconix Availability: 5.600In StockMOSFETs 80V 110A 375W | 5.600In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 80 V | 110 A | 11.2 mOhms | 20 V | 1 V | 180 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR4604LDP-T1-GE3 TTI: SIR4604LDP-T1-GE3 Vishay Availability: 6.000In StockMOSFETs N-CH SINGLE 60V PPAKSO8 | 6.000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 60 V | 51 A | 8.9 mOhms | 20 V | 3 V | 18.3 nC | - 55 C | + 150 C | 41.6 W | Enhancement | Reel | |||||
Mfr: SIR836DP-T1-GE3 TTI: SIR836DP-T1-GE3 Vishay Semiconductors Availability: 27.000In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 27.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 21 A | 19 mOhms | 20 V | 1.2 V | 11.8 nC | - 55 C | + 150 C | 15.6 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR836DP-GE3 | |||
250In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 3 A | 4.5 Ohms | 20 V | 2.5 V | 39 nC | - 55 C | + 150 C | 200 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SI3410DV-T1-GE3 TTI: SI3410DV-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs 30V Vds 20V Vgs TSOP-6 | 3.000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 30 V | 8 A | 19.5 mOhms | 20 V | 1 V | 33 nC | - 55 C | + 150 C | 4.1 W | Enhancement | TrenchFET | Reel | SI3410DV-GE3 | |||
Mfr: SIRS5700DP-T1-RE3 TTI: SIRS5700DP-T1-RE3 Vishay Availability: 6.000In StockMOSFETs N-CH 150V Vds 20Vgs 144A Rds .0062 | 6.000In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 150 V | 144 A | 5.6 mOhms | 20 V | 4 V | 73 nC | - 55 C | + 150 C | 278 W | Enhancement | Reel | |||||
Mfr: SQ2361CEES-T1/GE3 TTI: SQ2361CEES-T1/GE3 Vishay Availability: 6.000In StockMOSFETs P-CH SINGLE -60V SOT-23 AECQ | 6.000In Stock | Si | Reel |