Toshiba - SiC MOSFETs
80 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
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Not Available Online | Toshiba | ||||||||||||||||||||
Not Available Online | Toshiba | TW045Z120C,S1F | |||||||||||||||||||
Not Available Online | Toshiba | ||||||||||||||||||||
Not Available Online | Toshiba | ||||||||||||||||||||
Not Available Online | Toshiba |