YAGEO - MOSFETs
660 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 650 V | 10 A | 380 mOhms | 20 V | 5 V | 52.8 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
Mfr: XP10NA8R2LIT TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 100V 45.5A 8.2mOhms | 0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 100 V | 45.5 A | 8.2 mOhms | 20 V | 2.5 V | 68.8 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | ||||
Mfr: XP12NB4R4CMT TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 120V 24.6A 4.4mOhms | 0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 120 V | 24.6 A | 4.4 mOhms | 20 V | 4 V | 153.6 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | ||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 150 V | 9.4 A | 27 mOhms | 20 V | 4 V | 48 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 40 V | 33.8 A | 2.6 mOhms | 20 V | 2.3 V | 60.8 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 60 V | 32.5 A | 2.8 mOhms | 20 V | 4 V | 112 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 60 V | 100 A | 4.2 mOhms | 20 V | 4 V | 76 nC | - 55 C | + 175 C | 2.4 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 60 V | 49 A | 6.5 mOhms | 20 V | 4 V | 56 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-251VS-3 | N-Channel | 1 Channel | 60 V | 66 A | 6.5 mOhms | 20 V | 4 V | 56 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 66 A | 6.5 mOhms | 20 V | 4 V | 56 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 80 V | 46 A | 8 mOhms | 20 V | 5 V | 59.2 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 43.8 A | 1.8 mOhms | 20 V | 2.3 V | 141 nC | - 55 C | + 175 C | 6 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220CFM-3 | P-Channel | 1 Channel | 30 V | 54 A | 7 mOhms | 20 V | 3 V | 57.6 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-251S-3 | P-Channel | 1 Channel | 30 V | 75 A | 7 mOhms | 20 V | 3 V | 57.6 nC | 1.13 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 40 V | 75 A | 3.3 mOhms | 20 V | 3 V | 136 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 60 V | 65 A | 6.8 mOhms | 20 V | 3 V | 75.2 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 60 V | 35.7 A | 2.3 mOhms | 20 V | 3.8 V | 134 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 60 V | 27 A | 4 mOhms | 20 V | 4 V | 75 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 40 A | 2.1 mOhms | - 12 V, 20 V | 3 V | 54.4 nC | - 55 C | + 150 C | 52 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 40 V | 30.4 A | 3.2 mOhms | 20 V | 5 V | 142 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
0In Stock | Si | Reel | |||||||||||||||||||
0In Stock | Si | Tube | |||||||||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 66 A | 8.2 mOhms | 20 V | 2.5 V | 68.8 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | |||||
Mfr: XP60SA290DWL TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 600V 13.3A 290mOhms | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 13.3 A | 290 mOhms | 20 V | 5 V | 48 nC | - 55 C | + 150 C | 3.12 W | Enhancement | Tube | ||||
0In Stock | Si | SMD/SMT | PDFN-5 | N-Channel | 1 Channel | 600 V | 43 A | 85 mOhms | 20 V | 4 V | 144 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel |