YAGEO - MOSFETs
660 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | SMD/SMT | TOLL-9 | N-Channel | 1 Channel | 600 V | 49 A | 60 mOhms | 20 V | 5 V | 149 nC | - 55 C | + 150 C | 3.12 W | Enhancement | Reel | |||||
0In Stock | Si | Reel | |||||||||||||||||||
0In Stock | Si | Reel | |||||||||||||||||||
0In Stock | Si | Reel | |||||||||||||||||||
0In Stock | Si | Reel | |||||||||||||||||||
Mfr: XP6NA1R2LCXT TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 60V 48.9A 1.25mOhms | 0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 60 V | 48.9 A | 1.25 mOhms | 20 V | 2.4 V | 214 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | ||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 60 V | 30 A | 3.28 mOhms | 20 V | 4 V | 99.2 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 60 V | 105 A | 3.5 mOhms | 20 V | 4 V | 99 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 60 V | 105 A | 3.5 mOhms | 20 V | 4 V | 99 nC | - 55 C | + 150 C | 3.12 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 19 A | 50 mOhms | 20 V | 3 V | 52.8 nC | 2 W | Enhancement | Tube | |||||||
Mfr: XP70SC1K4DH TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 700V 3.3A 1400mOhms | 0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 700 V | 3.3 A | 1.4 Ohms | 20 V | 5 V | 16 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 30 V | 75 A | 7 mOhms | 20 V | 3 V | 57.6 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 100 V | 78 A | 7.5 mOhms | 20 V | 5 V | 97.6 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 100 V | 48.4 A | 11 mOhms | 20 V | 2.4 V | 44.8 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | |||||
Mfr: XP60SC125DDT8 TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 600V 26.5A 125mOhms | 0In Stock | Si | SMD/SMT | PDFN-5 | N-Channel | 1 Channel | 600 V | 26.5 A | 125 mOhms | 20 V | 4.5 V | 83 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | ||||
Mfr: XP60SC200DH TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 600V 16.6A 200mOhms | 0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 600 V | 16.6 A | 200 mOhms | 20 V | 4.5 V | 48 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 600 V | 28 A | 115 mOhms | 20 V | 5 V | 145 nC | - 55 C | + 150 C | 3.12 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 600 V | 20 A | 160 mOhms | 20 V | 4 V | 94.4 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 600 V | 7 A | 600 mOhms | 20 V | 5 V | 32 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
Mfr: XP60SL650AFH TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 600V 5.8A 650mOhms | 0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 600 V | 5.8 A | 650 mOhms | 20 V | 5 V | 32 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | ||||
Mfr: XP60SL650AFI TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 600V 5.8A 650mOhms | 0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 600 V | 5.8 A | 650 mOhms | 20 V | 5 V | 32 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | ||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 650 V | 20 A | 190 mOhms | 20 V | 5 V | 68.8 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 650 V | 7 A | 600 mOhms | 20 V | 5 V | 32.8 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
Mfr: XP65SL210AFI TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 650V 16.2A 210mOhms | 0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 650 V | 16.2 A | 210 mOhms | 20 V | 5 V | 91.2 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | ||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 650 V | 10 A | 380 mOhms | 20 V | 5 V | 52.8 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube |