YAGEO - MOSFETs
660 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 650 V | 20 A | 190 mOhms | 20 V | 5 V | 92.8 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 650 V | 10 A | 380 mOhms | 20 V | 5 V | 52.8 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
Mfr: XP10NA8R2LIT TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 100V 45.5A 8.2mOhms | 0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 100 V | 45.5 A | 8.2 mOhms | 20 V | 2.5 V | 68.8 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | ||||
Mfr: XP12NB4R4CMT TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 120V 24.6A 4.4mOhms | 0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 120 V | 24.6 A | 4.4 mOhms | 20 V | 4 V | 153.6 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | ||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 150 V | 9.4 A | 27 mOhms | 20 V | 4 V | 48 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 40 V | 33.8 A | 2.6 mOhms | 20 V | 2.3 V | 60.8 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 60 V | 32.5 A | 2.8 mOhms | 20 V | 4 V | 112 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 60 V | 100 A | 4.2 mOhms | 20 V | 4 V | 76 nC | - 55 C | + 175 C | 2.4 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 60 V | 49 A | 6.5 mOhms | 20 V | 4 V | 56 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-251VS-3 | N-Channel | 1 Channel | 60 V | 66 A | 6.5 mOhms | 20 V | 4 V | 56 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 66 A | 6.5 mOhms | 20 V | 4 V | 56 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 80 V | 46 A | 8 mOhms | 20 V | 5 V | 59.2 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 43.8 A | 1.8 mOhms | 20 V | 2.3 V | 141 nC | - 55 C | + 175 C | 6 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220CFM-3 | P-Channel | 1 Channel | 30 V | 54 A | 7 mOhms | 20 V | 3 V | 57.6 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-251S-3 | P-Channel | 1 Channel | 30 V | 75 A | 7 mOhms | 20 V | 3 V | 57.6 nC | 1.13 W | Enhancement | Tube | |||||||
Not Available Online | Si | SMD/SMT | TO-252-3/2 | N-Channel | 1 Channel | 500 V | 5 A | 1.5 Ohms | 30 V | 4 V | 15.4 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | |||||
Not Available Online | Si | SMD/SMT | TO-252-3/2 | P-Channel | 1 Channel | 60 V | 15 A | 90 mOhms | 25 V | 3 V | 14 nC | - 55 C | + 150 C | 31.3 W | Enhancement | Reel | |||||
Mfr: XP60SL600DH TTI: Not Assigned YAGEO XSemi Availability: Not Available OnlineMOSFETs N-CH 600V 7A TO-252 | Not Available Online | Si | SMD/SMT | TO-252-3/2 | N-Channel | 1 Channel | 600 V | 7 A | 600 mOhms | 20 V | 5 V | 20 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | ||||
Not Available Online | Si | Reel | |||||||||||||||||||
Mfr: XP12C220JY TTI: Not Assigned YAGEO XSemi Availability: Not Available OnlineMOSFETs N/P-CH 120V/-120V 2928-8L | Not Available Online | Si | SMD/SMT | N-Channel, P-Channel | 2 Channel | 120 V, 120 V | 1.3 A, 1.7 A | 220 mOhms, 380 mOhms | 20 V | 3 V, 3 V | 24 nC, 33.6 nC | - 55 C | + 150 C | 1.38 W | Enhancement | Reel | |||||
Not Available Online | Si | SMD/SMT | SOT-323-3 | N-Channel | 1 Channel | 20 V | 2.1 A | 65 mOhms | 8 V | 1 V | 14.4 nC | - 55 C | + 150 C | 350 mW | Enhancement | Reel | |||||
Mfr: XP60SA380ADI TTI: Not Assigned YAGEO XSemi Availability: Not Available OnlineMOSFETs N-CH SINGLE 600V TO220CFM | Not Available Online | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 600 V | 10 A | 388 mOhms | 20 V | 4.5 V | 35 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | ||||
Not Available Online | Si | SMD/SMT | SO-8 | P-Channel | 2 Channel | 20 V | 5.6 A | 45 mOhms | 12 V | 1.2 V | 30 nC | - 55 C | + 150 C | 2 W | Enhancement | ||||||
Not Available Online | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 8 A | 680 mOhms | 20 V | 4 V | 32 nC | - 55 C | + 150 C | 96 W | Enhancement | ||||||
Mfr: XP10N011LH TTI: Not Assigned YAGEO XSemi Availability: Not Available OnlineMOSFETs N-CH SINGLE 100V TO252 | Not Available Online | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 100 V | 48.4 A | 11 mOhms | 20 V | 3 V | 44.8 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel |