YAGEO - MOSFETs
660 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Not Available Online | Si | SMD/SMT | SO-8 | P-Channel | 2 Channel | 30 V | 6 A | 36 mOhms | 20 V | 3 V | 14.5 nC | - 55 C | + 150 C | 2 W | Enhancement | ||||||
Mfr: XP60SL300AFI TTI: Not Assigned YAGEO XSemi Availability: Not Available OnlineMOSFETs N-CH SINGLE 600V TO220CFM | Not Available Online | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 600 V | 10.5 A | 300 mOhms | 20 V | 5 V | 62.4 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | ||||
Not Available Online | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 100 V | 67 A | 18 mOhms | 20 V | 5 V | 90 nC | - 55 C | + 150 C | 167 W | Enhancement | ||||||
Not Available Online | Si | SMD/SMT | TO-252-3 | P-Channel | 1 Channel | 40 V | 22 A | 50 mOhms | 25 V | 3 V | 19 nC | - 55 C | + 150 C | 34.7 W | Enhancement | ||||||
Not Available Online | Si | SMD/SMT | TO-252-3 | P-Channel | 1 Channel | 60 V | 17 A | 64 mOhms | 30 V | 3 V | 56 nC | - 55 C | + 150 C | 36 W | Enhancement | ||||||
Not Available Online | Si | SMD/SMT | TO-252-3 | P-Channel | 1 Channel | 60 V | 10 A | 160 mOhms | 25 V | 3 V | 16 nC | - 55 C | + 150 C | 28 W | Enhancement | ||||||
Not Available Online | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 80 V | 21.3 A | 45 mOhms | 25 V | 3 V | 30 nC | - 55 C | + 150 C | 41.7 W | Enhancement | ||||||
Not Available Online | Si | SMD/SMT | SO-8 | N-Channel | 2 Channel | 80 V | 4.6 A | 52 mOhms | 20 V | 3 V | 30 nC | - 55 C | + 150 C | 2 W | Enhancement | ||||||
Not Available Online | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 80 V | 15 A | 90 mOhms | 25 V | 3 V | 18 nC | - 55 C | + 150 C | 34.7 W | Enhancement | ||||||
Not Available Online | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 30 V | 8 A | 22.5 mOhms | 8 V | 1 V | 8 nC | - 55 C | + 150 C | 2.5 W | Enhancement | ||||||
Not Available Online | Si | Through Hole | TO-220CFM-3 | P-Channel | 1 Channel | 40 V | 36 A | 16 mOhms | 20 V | 3 V | 25 nC | - 55 C | + 150 C | 33.7 W | Enhancement | Tube | |||||
Not Available Online | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 3.2 A | 85 mOhms | 12 V | 1.2 V | 4.4 nC | - 55 C | + 150 C | 1.38 W | Enhancement | Reel | |||||
Not Available Online | Si | SMD/SMT | TO-252-3/2 | P-Channel | 1 Channel | 40 V | 45 A | 16 mOhms | 20 V | 3 V | 25 nC | - 55 C | + 150 C | 54.3 W | Enhancement | Reel | |||||
Mfr: XP50AN500P TTI: Not Assigned YAGEO XSemi Availability: Not Available OnlineMOSFETs N-CH SINGLE 500V TO220 | Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 13 A | 500 mOhms | 30 V | 4 V | 64 nC | - 55 C | + 150 C | 2 W | Enhancement | |||||
Mfr: XP60SA380ADIT TTI: Not Assigned YAGEO XSemi Availability: Not Available OnlineMOSFETs N-CH SINGLE 600V TO220CFM-T | Not Available Online | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 600 V | 10 A | 388 mOhms | 20 V | 4.5 V | 35 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | ||||
Mfr: XP20N15AGH TTI: Not Assigned YAGEO XSemi Availability: Not Available OnlineMOSFETs N-CH SINGLE 150V TO252 | Not Available Online | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 150 V | 20.5 A | 100 mOhms | 20 V | 3 V | 28 nC | - 55 C | + 150 C | 89.2 W | Enhancement | |||||
Not Available Online | Si | SMD/SMT | PMPAK-8 | P-Channel | 1 Channel | 30 V | 14 A | 11 mOhms | 25 V | 3 V | 38.4 nC | - 55 C | + 150 C | 3.12 W | Enhancement | Reel | |||||
Not Available Online | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 40 V | 75 A | 7 mOhms | 20 V | 1.5 V | 58 nC | - 55 C | + 150 C | 89 W | Enhancement | ||||||
Not Available Online | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 40 V | 14.6 A | 7 mOhms | 20 V | 2 V | 51 nC | - 55 C | + 150 C | 2.5 W | Enhancement | ||||||
Not Available Online | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 60 V | 12.8 A | 10.5 mOhms | 20 V | 3 V | 84 nC | - 55 C | + 150 C | 2.5 W | Enhancement | ||||||
Mfr: XP10NA1R5TL-AT TTI: Not Assigned YAGEO XSemi Availability: Not Available OnlineMOSFETs N-CH SINGLE 100V TOLL AUTO | Not Available Online | Si | SMD/SMT | TOLL-9 | N-Channel | 1 Channel | 100 V | 347 A | 1.5 mOhms | 20 V | 4 V | 328 nC | - 55 C | + 175 C | 3.75 W | Enhancement | Reel | ||||
Not Available Online | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 30 V | 18 A | 5 mOhms | 12 V | 1.2 V | 45 nC | - 55 C | + 150 C | 2.5 W | Enhancement | ||||||
Not Available Online | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 30 V | 28 A | 25 mOhms | 25 V | 3 V | 9 nC | - 55 C | + 150 C | 31.25 W | Enhancement | ||||||
Not Available Online | Si | SMD/SMT | TO-252-4 | N-Channel, P-Channel | 2 Channel | 100 V, 100 V | 3.2 A, 3.2 A | 72 mOhms, 125 mOhms | 25 V | 3 V, 3 V | 15 nC, 21 nC | - 55 C | + 150 C | 8.9 W | Enhancement | ||||||
Not Available Online | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 600 V | 3.3 A | 3.6 Ohms | 30 V | 4 V | 11.4 nC | - 55 C | + 150 C | 54.3 W | Enhancement |