YAGEO - MOSFETs
660 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | Reel | |||||||||||||||||||
0In Stock | Si | Reel | |||||||||||||||||||
Mfr: XP4NA1R5HCST TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-CH SINGLE 40V SPPAK5X6 | 0In Stock | Si | Reel | ||||||||||||||||||
0In Stock | Si | SMD/SMT | SO-8 | P-Channel | 1 Channel | 40 V | 9.4 A | 18 mOhms | 20 V | 3 V | 48 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SO-8 | P-Channel | 1 Channel | 30 V | 9 A | 21 mOhms | 25 V | 3 V | 14.4 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | TO-252-3 | P-Channel | 1 Channel | 30 V | 75 A | 7 mOhms | 20 V | 3 V | 57.6 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | N-Channel | 2 Channel | 20 V | 7.5 A | 16 mOhms | 12 V | 1 V | 19.2 nC | - 55 C | + 150 C | 1.38 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 2 Channel | 20 V | 8.5 A | 18 mOhms | 8 V | 1 V | 26 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SO-8 | P-Channel | 1 Channel | 100 V | 3 A | 135 mOhms | 20 V | 3 V | 46 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 100 V | 9.5 A | 28 mOhms | - 16 V, 20 V | 3 V | 23.2 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 40 V | 32 A | 2.8 mOhms | 20 V | 3 V | 60.8 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | TO-252-3 | P-Channel | 1 Channel | 40 V | 45 A | 16 mOhms | 20 V | 3 V | 51.2 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 60 V | 9 A | 21 mOhms | 20 V | 3 V | 54.4 nC | - 55 C | + 150 C | 3.57 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-251VS-3 | N-Channel | 1 Channel | 60 V | 7.5 A | 100 mOhms | 20 V | 3 V | 16 nC | - 55 C | + 150 C | 1.13 W | Enhancement | Tube | |||||
Mfr: XP3C017AYT TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N+P MOS 30V 9.3/-7.5A 17.8/30mOhms | 0In Stock | Si | SMD/SMT | PMPAK-6 | N-Channel, P-Channel | 2 Channel | 30 V, 30 V | 7.5 A, 9.3 A | 17.8 mOhms, 30 mOhms | 20 V | 2.5 V, 2.5 V | 16 nC, 14.4 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 30 V | 23.3 A | 20 mOhms | 20 V | 3 V | 8.8 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 30 V | 12.5 A | 9.5 mOhms | 20 V | 3 V | 28.8 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 36 A | 2.7 mOhms | 20 V | 2.5 V | 47 nC | - 55 C | + 175 C | 6 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 30 V | 30 A | 20 mOhms | 20 V | 3 V | 19.2 nC | - 55 C | + 150 C | 1.13 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 30 V | 13 A | 9 mOhms | 20 V | 3 V | 24 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 2 Channel | 30 V | 11 A | 13 mOhms | 20 V | 2.3 V | 14.4 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 40 V | 27.4 A | 18 mOhms | 20 V | 3 V | 25.6 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 2 Channel | 30 V | 10.3 A, 12.7 A | 8.5 mOhms, 10.8 mOhms | 20 V | 3 V | 12 nC, 15.2 nC | - 55 C | + 150 C | 1.9 W, 2.2 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 2 Channel | 30 V | 10.8 A | 10.4 mOhms | 20 V | 3 V | 22.4 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SO-8 | N-Channel, P-Channel | 2 Channel | 30 V, 30 V | 7.8 A, 10.8 A | 10 mOhms, 22 mOhms | 20 V | 3 V, 3 V | 16 nC, 20.8 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel |