Littelfuse 1200V SiC MOSFETs
Littelfuse IXYS 1200V SiC MOSFETs are engineered for demanding high-frequency and high-efficiency power applications. These devices feature extremely low gate charge, output capacitance, and gate resistance and enable superior high-frequency switching performance. The very low drain-source on-state resistance reduces energy loss during conduction, and the mix of low gate charge and on-resistance greatly cuts down on both switching and conduction losses. Typical applications of 1200V SiC MOSFETs include xEV chargers, medical power supplies, and industrial welding.
Features
- Designed for high frequency, high-efficiency applications
- For high-frequency switching offers low gate resistance
- Maintains a normally-off operation at all temperatures
- Power cycling capability is good
- Very low output capacitance and gate charge
Applications
- High switching frequency industrial power converters
- Industrial laser, plasma generators power supplies
- Industrial welding, induction and heating power suppliers
- Medical power supplies
- xEV chargers
Technical Specifications
| Parameters | Values |
|---|---|
| Drain-source voltage | 1200V |
| Maximum gate source voltage | -5V to +20V |
| Operating junction temperature | -55°C to +175°C |
| Maximum power dissipation | 500W |
