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IXFH16N50P3

MOSFETs Polar3 HiPerFET Power MOSFET

Manufacturer:

Mfr Part:
IXFH16N50P3

TTI Part:
IXFH16N50P3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage500 V
Id - Continuous Drain Current16 A
Rds On - Drain-Source Resistance360 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage3 V
Qg - Gate Charge29 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation330 W
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Product TypeMOSFETs
SeriesIXFH16N50
SubcategoryTransistors
Transistor Type1 N-Channel

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541900000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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Lead Time: 29 Weeks
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3,41 €1.023,00 €
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NCNR - Cannot be cancelled or returned.

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