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IXFK220N17T2

MOSFETs GigaMOS Trench T2 HiperFET Pwr MOSFET

Manufacturer:

Mfr Part:
IXFK220N17T2

TTI Part:
IXFK220N17T2

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-264-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage170 V
Id - Continuous Drain Current220 A
Rds On - Drain-Source Resistance6.3 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge500 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation1.25 kW
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time150 ns
Forward Transconductance - Min105 S
Product TypeMOSFETs
Rise Time160 ns
SeriesIXFK220N17
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time40 ns
Typical Turn-On Delay Time44 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541500000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

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