Reference Only

IXTH110N10L2

MOSFETs L2 Linear Power MOSFET

Manufacturer:

Mfr Part:
IXTH110N10L2

TTI Part:
IXTH110N10L2

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current110 A
Rds On - Drain-Source Resistance18 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge260 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation600 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time24 ns
Forward Transconductance - Min45 S
Product TypeMOSFETs
Rise Time130 ns
SeriesIXTH110N10
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time99 ns
Typical Turn-On Delay Time28 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541900000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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