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IXTH76P10T

MOSFETs -76 Amps -100V 0.024 Rds

Manufacturer:

Mfr Part:
IXTH76P10T

TTI Part:
IXTH76P10T

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current76 A
Rds On - Drain-Source Resistance25 mOhms
Vgs - Gate-Source Voltage- 15 V, 15 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge197 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation298 W
Channel ModeEnhancement
TradenameTrenchP
PackagingTube
Fall Time20 ns
Forward Transconductance - Min35 S
Product TypeMOSFETs
Rise Time40 ns
SeriesIXTH76P10
SubcategoryTransistors
Typical Turn-Off Delay Time52 ns
Typical Turn-On Delay Time25 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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