Reference Only

IXTP12N50P

MOSFETs 12 Amps 500V 0.5 Ohm Rds

Manufacturer:

Mfr Part:
IXTP12N50P

TTI Part:
IXTP12N50P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage500 V
Id - Continuous Drain Current12 A
Rds On - Drain-Source Resistance500 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage5.5 V
Qg - Gate Charge29 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation200 W
Channel ModeEnhancement
TradenamePolar
PackagingTube
ConfigurationSingle
Fall Time20 ns
Forward Transconductance - Min7.5 S
Product TypeMOSFETs
Rise Time27 ns
SeriesIXTP12N50P
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time65 ns
Typical Turn-On Delay Time22 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

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1,67 €501,00 €
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NCNR - Cannot be cancelled or returned.

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