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IXTP180N10T

MOSFETs MOSFET Id180 BVdass100

Manufacturer:

Mfr Part:
IXTP180N10T

TTI Part:
IXTP180N10T

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current180 A
Rds On - Drain-Source Resistance6.4 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge151 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation480 W
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time31 ns
Forward Transconductance - Min110 S
Product TypeMOSFETs
Rise Time54 ns
SeriesIXTP180N10
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time42 ns
Typical Turn-On Delay Time33 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541500000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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