Reference Only

IXTQ96N25T

MOSFETs 96 Amps 250V 36 Rds

Manufacturer:

Mfr Part:
IXTQ96N25T

TTI Part:
IXTQ96N25T

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-3P-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage250 V
Id - Continuous Drain Current96 A
Rds On - Drain-Source Resistance29 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge114 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation625 W
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time28 ns
Product TypeMOSFETs
Rise Time22 ns
SeriesIXTQ96N25
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time59 ns
Typical Turn-On Delay Time20 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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3,93 €1.179,00 €
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