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IXTY18P10T

MOSFETs -100V -18A

Manufacturer:

Mfr Part:
IXTY18P10T

TTI Part:
IXTY18P10T

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseDPAK-3 (TO-252-3)
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current18 A
Rds On - Drain-Source Resistance120 mOhms
Vgs - Gate-Source Voltage- 15 V, 15 V
Vgs th - Gate-Source Threshold Voltage4.5 V
Qg - Gate Charge39 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation83 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time22 ns
Forward Transconductance - Min13 S
Product TypeMOSFETs
Rise Time26 ns
SeriesIXTY18P10
SubcategoryTransistors
Transistor Type1 P-Channel
Typical Turn-Off Delay Time44 ns
Typical Turn-On Delay Time19 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541900000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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NCNR - Cannot be cancelled or returned.

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