Reference Only

IXYP20N65C3D1

IGBTs DISC IGBT 650V TO-220

Manufacturer:

Mfr Part:
IXYP20N65C3D1

TTI Part:
IXYP20N65C3D1

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max650 V
Collector-Emitter Saturation Voltage2.5 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C50 A
Pd - Power Dissipation200 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
SeriesPlanar
PackagingTube
Product TypeIGBT Transistors
SubcategoryIGBTs
TradenameXPT, GenX3

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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EDA / CAD Models

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