Reference Only

2N2219A

Bipolar Transistors - BJT BIPOLAR POWER TRANSISTOR

Manufacturer:

Mfr Part:
2N2219A

TTI Part:
2N2219A

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerTT Electronics
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-39-3
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max40 V
Collector- Base Voltage VCBO75 V
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage1 V
Pd - Power Dissipation800 mW
Gain Bandwidth Product fT300 MHz
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 200 C
PackagingBulk
Continuous Collector Current800 mA
DC Collector/Base Gain hfe Min100 at 150 mA, 10 V
DC Current Gain hFE Max300 at 150 mA, 10 V
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541210075
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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NCNR - Cannot be cancelled or returned.

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