Reference Only

IRF530STRRPBF

MOSFETs N-CH SINGLE 100V TO263

Manufacturer:

Mfr Part:
IRF530STRRPBF

TTI Part:
IRF530STRRPBF

EDA / CAD Models

Alternate Part Number

SIHF530STRR-GE3

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD2PAK-3 (TO-263-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current14 A
Rds On - Drain-Source Resistance160 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge26 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation88 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time24 ns
Forward Transconductance - Min5.1 S
Product TypeMOSFETs
Rise Time34 ns
SeriesIRF
SubcategoryTransistors
Typical Turn-Off Delay Time23 ns
Typical Turn-On Delay Time10 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption Number7a
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

0In Stock

Available For Backorder
Lead Time: 24 Weeks
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Reel

(Minimum: 800 / Multiples: 800)
Quantity Unit PriceExt. Price
0,24 €192,00 €
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