Reference Only

SIHFZ48RS-GE3

MOSFETs 60V Vds 20V Vgs D2PAK (TO-263)

Manufacturer:

Mfr Part:
SIHFZ48RS-GE3

TTI Part:
SIHFZ48RS-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD2PAK-3 (TO-263-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current50 A
Rds On - Drain-Source Resistance18 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge110 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation190 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time250 ns
Forward Transconductance - Min27 S
Product TypeMOSFETs
Rise Time250 ns
SeriesSIHFZ
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time210 ns
Typical Turn-On Delay Time8.1 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption Number7a
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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