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SQS488CENW-T1/GE3

MOSFETs N-CH SINGLE 40V PPAK 1212-8W

Manufacturer:

Mfr Part:
SQS488CENW-T1/GE3

TTI Part:
SQS488CENW-T1/GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / Case1212-8W
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current16 A
Rds On - Drain-Source Resistance8.7 mOhms
Vgs - Gate-Source Voltage10 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge4 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation39.47 W
Channel ModeDepletion
PackagingReel
Product TypeMOSFETs
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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