Reference Only
2SK3079ATE12LQ
RF MOSFET Transistors N-Ch Radio Freq 3A 20W 10V VDSS.
Datasheet
2SK3079ATE12LQ DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Toshiba | |
| Product Category | RF MOSFET Transistors | |
| Transistor Polarity | N-Channel | |
| Technology | Si | |
| Id - Continuous Drain Current | 3 A | |
| Vds - Drain-Source Breakdown Voltage | 10 V | |
| Operating Frequency | 470 MHz | |
| Gain | 13.5 dB | |
| Output Power | 2.2 W | |
| Mounting Style | SMD/SMT | |
| Package / Case | PW-X-4 | |
| Packaging | Reel | |
| Pd - Power Dissipation | 20 W | |
| Product Type | RF MOSFET Transistors | |
| Series | 2SK3079 | |
| Subcategory | MOSFETs | |
| Type | RF Power MOSFET | |
| Vgs - Gate-Source Voltage | + 3 V | |
| Vgs th - Gate-Source Threshold Voltage | 800 mV |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541210075 |
| TARIC | 8541210000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
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Unit Price
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Ext. Price
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Reel
(Minimum: 1.000 / Multiples: 1)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1,04 € | 1.040,00 € |
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