Reference Only

HN1A01FU-Y,LF

Bipolar Transistors - BJT US6 PLN TRANSISTOR Pd=200mW F=1MHz.

Manufacturer:

Mfr Part:
HN1A01FU-Y,LF

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleSMD/SMT
Package / CaseUS-6
Transistor PolarityPNP
ConfigurationDual
Maximum DC Collector Current150 mA
Collector- Emitter Voltage VCEO Max50 V
Collector- Base Voltage VCBO50 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage100 mV
Maximum DC Collector Current150 mA
Pd - Power Dissipation200 mW
Gain Bandwidth Product fT80 MHz
Maximum Operating Temperature+ 125 C
QualificationAEC-Q101
SeriesHN1A01
PackagingReel
Continuous Collector Current- 150 mA
DC Collector/Base Gain hfe Min120
DC Current Gain hFE Max400
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541210095
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

0In Stock

Available For Backorder
Lead Time: 19 Weeks
Please adjust quantity to minimum and multiple values.
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Ext. Price
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Reel

(Minimum: 3.000 / Multiples: 1)
Quantity Unit PriceExt. Price
0,05 €150,00 €
0,046 €276,00 €
0,041 €369,00 €
0,0277 €664,80 €
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