Reference Only

IXXH40N65C4D1

IGBTs DISC IGBT 650V TO247AD.

Manufacturer:

Mfr Part:
IXXH40N65C4D1

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseTO-247-3
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max650 V
Collector-Emitter Saturation Voltage2.3 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C110 A
Pd - Power Dissipation455 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
SeriesTrench - 650V - 1200V GenX15
PackagingTube
Continuous Collector Current Ic Max110 A
Gate-Emitter Leakage Current100 nA
Product TypeIGBT Transistors
SubcategoryIGBTs
TradenameXPT

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290095
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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5,18 €1.554,00 €
4,61 €2.351,10 €
4,32 €4.406,40 €
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