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IXYN120N65C3D1

IGBTs IGBT MOD 650V SOT227UI.

Manufacturer:

Mfr Part:
IXYN120N65C3D1

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseSOT-227B-4
Mounting StyleScrew Mount
ConfigurationSingle
Collector- Emitter Voltage VCEO Max650 V
Collector-Emitter Saturation Voltage2.3 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C190 A
Pd - Power Dissipation830 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingTube
Continuous Collector Current Ic Max620 A
Gate-Emitter Leakage Current100 nA
Product TypeIGBT Transistors
SubcategoryIGBTs

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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36,16 €361,60 €
32,04 €3.204,00 €
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