Reference Only
TJ200F04M3L,LXHQ
MOSFETs 375W 1MHz Automotive; AEC-Q101.
Datasheet
TJ200F04M3L,LXHQ DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Toshiba | |
| Product Category | MOSFETs | |
| Technology | Si | |
| Mounting Style | SMD/SMT | |
| Package / Case | TO-220SM-3 | |
| Transistor Polarity | P-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 40 V | |
| Id - Continuous Drain Current | 200 A | |
| Rds On - Drain-Source Resistance | 1.8 mOhms | |
| Vgs - Gate-Source Voltage | - 20 V, 10 V | |
| Vgs th - Gate-Source Threshold Voltage | 3 V | |
| Qg - Gate Charge | 460 nC | |
| Maximum Operating Temperature | + 175 C | |
| Pd - Power Dissipation | 375 W | |
| Channel Mode | Enhancement | |
| Qualification | AEC-Q101 | |
| Packaging | Reel | |
| Configuration | Single | |
| Fall Time | 515 ns | |
| Moisture Sensitive | Yes | |
| Product Type | MOSFETs | |
| Rise Time | 14 ns | |
| Series | U-MOSVI | |
| Subcategory | Transistors | |
| Transistor Type | 1 P-Channel | |
| Typical Turn-Off Delay Time | 1750 ns | |
| Typical Turn-On Delay Time | 29 ns | |
| Part # Aliases | TJ200F04M3L,LXHQ(O |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541290065 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
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