Reference Only
TW030Z120C,S1F
SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 30mohm.
Datasheet
TW030Z120C,S1F DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Toshiba | |
| Product Category | SiC MOSFETs | |
| Mounting Style | Through Hole | |
| Package / Case | TO-247-4 | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 1.2 kV | |
| Id - Continuous Drain Current | 60 A | |
| Rds On - Drain-Source Resistance | 30 mOhms | |
| Vgs - Gate-Source Voltage | - 10 V, + 25 V | |
| Vgs th - Gate-Source Threshold Voltage | 5 V | |
| Qg - Gate Charge | 82 nC | |
| Maximum Operating Temperature | + 175 C | |
| Pd - Power Dissipation | 249 W | |
| Channel Mode | Enhancement | |
| Configuration | Single | |
| Fall Time | 20 ns | |
| Packaging | Tube | |
| Product Type | SiC MOSFETS | |
| Rise Time | 15 ns | |
| Series | 3rd Generation | |
| Subcategory | Transistors | |
| Technology | SiC | |
| Typical Turn-Off Delay Time | 51 ns | |
| Typical Turn-On Delay Time | 29 ns |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
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