Reference Only

XP10C1K8EU6

MOSFETs N+P MOS 100V 0.27/-0.2A 1800/3600mOhms.

Manufacturer:

Mfr Part:
XP10C1K8EU6

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerYAGEO
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-363-6
Transistor PolarityN-Channel, P-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage100 V, 100 V
Id - Continuous Drain Current200 mA, 270 mA
Rds On - Drain-Source Resistance1.8 Ohms, 3.6 Ohms
Vgs - Gate-Source Voltage20 V
Vgs th - Gate-Source Threshold Voltage3 V, 3 V
Qg - Gate Charge3.7 nC, 4.2 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation277 mW
Channel ModeEnhancement
PackagingReel
ConfigurationDual
Fall Time14 ns
Forward Transconductance - Min750 mS, 600 mS
Product TypeMOSFETs
Rise Time3 ns
SeriesXP
SubcategoryTransistors
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time15 ns, 19 ns
Typical Turn-On Delay Time9 ns

Export and Environmental Classification

AttributeDescription
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

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