Reference Only

XP3800YT

MOSFETs N-MOS 30V 10.3A 10.8mOhms.

Manufacturer:

Mfr Part:
XP3800YT

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerYAGEO
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePMPAK-8
Transistor PolarityN-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current10.3 A, 12.7 A
Rds On - Drain-Source Resistance8.5 mOhms, 10.8 mOhms
Vgs - Gate-Source Voltage20 V
Vgs th - Gate-Source Threshold Voltage3 V
Qg - Gate Charge12 nC, 15.2 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation1.9 W, 2.2 W
Channel ModeEnhancement
PackagingReel
ConfigurationDual
Fall Time5 ns, 13 ns
Forward Transconductance - Min35 S, 40 S
Product TypeMOSFETs
Rise Time6 ns, 7 ns
SeriesXP
SubcategoryTransistors
Transistor Type2 N-Channel
Typical Turn-Off Delay Time17 ns, 22 ns
Typical Turn-On Delay Time6 ns, 8 ns

Export and Environmental Classification

AttributeDescription
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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