Reference Only

XP3C011M

MOSFETs N+P MOS 30V 10.8/-7.8A 10/22mOhms.

Manufacturer:

Mfr Part:
XP3C011M

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerYAGEO
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSO-8
Transistor PolarityN-Channel, P-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage30 V, 30 V
Id - Continuous Drain Current7.8 A, 10.8 A
Rds On - Drain-Source Resistance10 mOhms, 22 mOhms
Vgs - Gate-Source Voltage20 V
Vgs th - Gate-Source Threshold Voltage3 V, 3 V
Qg - Gate Charge16 nC, 20.8 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation2 W
Channel ModeEnhancement
PackagingReel
ConfigurationDual
Fall Time5 ns, 18 ns
Forward Transconductance - Min35 S, 15 S
Product TypeMOSFETs
Rise Time8 ns, 6 ns
SeriesXP
SubcategoryTransistors
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time20 ns, 42 ns
Typical Turn-On Delay Time8 ns, 11 ns

Export and Environmental Classification

AttributeDescription
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

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0,222 €666,00 €
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0,153 €3.672,00 €
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